Журнал «Радиотехника» | Издательство РАДИОТЕХНИКА

M.A. Karpov - Ph. D. (Eng), MIREA
D.V. Nikishin - Post-graduate Student, MIREA
A.V. Shpak - Ph. D. (Eng), MIREA
E.V. Egorova - Ph. D. (Eng), MIREA
E.O. Petrenko - Post-graduate Student, MIREA
S.S. Halimov - Post-graduate Student, MIREA

Innovative Technologies in Production of Microwave Solid State Electronic Components

V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
L.M Pazinich - Vice-Director of R&D Centre for Solid-State Electronics, GZ Pulsar. E-mail: pazinich@gz-pulsar.ru

Generator of high-voltage nanosecond pulses avalanche transistors

Negation of the decoder

O.A. Gromov - Assistant, Department of Automation and Telemechanics, Perm National Research Polytechnic University. E-mail: ogromov@inbox.ru
A.Y. Gorodilov - Research Associate, Perm National Research Polytechnic University. E-mail: gora830@yandex.ru
A.A. Suleymanov - Post-graduate Student, Assistant, Department of Automation and Telemechanics, Perm National Research Polytechnic University. E-mail: alex@pstu.ru
S.F. Turin - Dr.Sc. (Eng.), Professor, Department of Automation and Telemechanics, Perm National Research Polytechnic University. E-mail: tyurinsergfeo@rambler.ru

Choice of circuitry, design-technology realizations by development of an invasive biosensor based on a transistor

V. N. Vyuginov - Ph.D. (Eng.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
A. G. Gudkov - Dr.Sc. (Eng.), Professor, MSTU named after N. E. Bauman; General Director, «Hyperion» Ltd
A. A. Zybin - Head of Laboratory, CJSC «Svetlana-Electronpribor», St.-Peterburg
S. A. Meshkov - Ph.D. (Eng.), Senior Research Scientist, «Hyperion» Ltd
D. I. Tsyganov - Dr.Sc. (Eng.), Russian Medical Academy of Postgraduate Education Studies

Multygate 3D transistor with field modulation of negative charged excitons transport

L.I. Gursky - Corresponding Member NANB, BGUIR
G.V. Krylova - Ph.D. (Phys.-Math.), Leading Research Scientist, BGU

Modelling of voltage source inverter based on IGBT using space vector Pulse-width modulation technique

Е. М. Solodkiy - Senior Lecturer, Perm National Research Polytechnic University. Е-mail: wsdl00@gmail.com
D. А. Dadenkov - Senior Lecturer, Perm National Research Polytechnic University. Е-mail: dadenkov@mail.ru

A new method of gate dielectric degradation analysis in nigh-speed field-effect transistor

V.E. Drach - Ph. D. (Eng.), Associate Professor, EIU1-KF, Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org
A.V. Rodionov - Ph. D. (Eng.), Associate Professor, EIU2-KF, Kaluga branch of the Bauman MSTU. E-mail: andviro@gmail.com

The effect of intermodulation at the output transmitting adaptive antenna array

D.D. Ganzii - Dr. Sc. (Eng.), Head of Department, Scientific-Research Center «VIGSTAR» (Moscow) E-mail: ntc4@vigstar.ru P.V. Rusakov - Head of Sector, GSKB Almaz-Antey (Moscow) E-mail: rp258rt@rambler.ru G.I. Troshin - Dr. Sc. (Eng.), Professor, Leading Research Scientist, Scientific-Research Center «VIGSTAR» (Moscow) E-mail: ntc4@vigstar.ru

Simulation of the potential temperature distribution in SOI CMOS nanotransistors with «no overlap» architecture

N.V. Masalski - Ph.D. (Phys.-Math.), Senior Researcher, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru

O.V. Losev and ways of development of Russian microelectronics in the 21st century

S.A. Gilyov - Leading Engineer, Museum of science «Nizhny Novgorod Radiolaboratory», Lobachevsky State University of Nizhny Novgorod (Nizhny Novgorod). E-mail: serangil-nrl@yandex.ru M.A. Novikov - Ph. D. (Phys.-Math.), Leading Research Scientist, Institute for Physics of Microstructures of RAS (Nizhny Novgorod). E-mail: mnovik@ipm.sci-nnov.ru A.A. Potapov - Dr. Sc. (Phys.-Math.), Professor, Main Research Scientist, Kotel\'nikov IRE of RAS (Moscow); President of cooperative Chinese-Russian laboratory of informational technologies and signals fractal processing (China, Guanzhou). E-mail: potapov@cplire.ru A.E. Rassadin - co-ordinator of united scientific and educational programmes of Nizhny Novgorod regional division of A.S. Popov-s STSREC (Nizhny Novgorod). E-mail: brat_ras@list.ru

Design of broadband high power amplifier modules over the range of 2-4 GHz with an output power of 50 W

M.P. Apin - Ph. D. (Econ.), First Deputy General Director - Main Engineer, JSC «SPE «Almaz» (Saratov) L.S. Sotov - Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky A.L. Khvalin - Dr. Sc. (Eng.), Associate Professor, Saratov State University named after N.G. Chernyshevsky

Threshold characteristics of the double gate symmetric MOSFETs nanotransistor with a Gaussian vertical doping profile

N.V. Masalskii - Ph.D. (Phys.-Math.), the Manager Sector, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru

Simulation of current distribution in the powerful HF (UHF) transistor wiring system

O.M. Bulgakov - Dr. Sc. (Eng.), Professor, First Deputy Commander, Krasnodar University of Ministry of Interior of RF M.Yu. Paklyachenko - Post-graduate Student, Voronezh Institute of Ministry of Interior of RF. E-mail: marina_lion@mail.ru

Research of volt-ampere characteristics multiparametric biosensor without gate by mathematical modeling method

A.G. Gudkov - Dr.Sc. (Eng.), Professor, Department of Instrumentation Technology, MSTU n.a. N.E. Bauman; General Director, OOO «NPI FIRMA «HYPERION» (Moscow). E-mail: profgudkov@gmail.com; ooo.giperion@gmail.com V.N. Viyuginov - Ph.D. (Phys.-Math.), Director, CJSC «Svetlana-Elektronpribor» (St.-Petersburg). E-mail: vyuginov@svetlana-ep.ru V.G. Tihomirov - Ph.D. (Phys.-Math.), CJSC «SvetlanaElektronpribor» (St.-Petersburg). E-mail: v11111@yandex.ru A.A. Zybin - Head of Laboratory, CJSC «SvetlanaElektronpribor» (St.-Petersburg). E-mail: zybin_aa@svetlana-ep.ru

Dependence analysis of the GaN HEMT parameters on the thickness AlGaN barrier layer by numerical simulation

V.A. Petrov - Engineer, CJSC "Svetlana - Elektronpribor" (St.-Peterburg). E-mail: v.petrov@svetlana-ep.ru V.G. Tikhomirov - Ph.D. (Eng.), CJSC "Svetlana - Elektronpribor" (St.-Peterburg). E-mail: v11111@yandex.ru

Method and equipment for measuring of low-frequency noise

V.N. Vyuginov - Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov - Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: profgudkov@gmail.com V.A. Dobrov - Head of Department, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: dobrov@svetlana-ep.ru T.Yu. Kudryashova - Senior Lecturer, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru A.V. Mescheryakov - Ph. D. (Eng.), Associate Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru V.G. Usychenko - Dr. Sc. (Phys.-Math.), Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: usychenko@rphf.spbstu.ru V.D. Shashurin - Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Bauman Moscow State Technical University. E-mail: chigikov95@mail.ru

The electromagnetic compatibility characteristics of input microwave low-noise amplifier based on heterojunction bipolar transistor under ultra-short pulse series exposure

A.M. Bobreshov - Dr. Sc. (Phys.-Math.), Professor, Dean of Faculty of Physics, Voronezh State University. E-mail: bobreshov@phys.vsu.ru I.S. Korovchenko - Ph. D. (Phys.-Math.), Associate Professor, Faculty of Physics, Voronezh State University. E-mail: korovchenko@vsu.ru V.A. Stepkin - Ph. D. (Phys.-Math.), Associate Professor, Faculty of Physics, Voronezh State University. E-mail: stepkin@phys.vsu.ru G.K. Uskov - Dr. Sc. (Phys.-Math.), Associate Professor, Faculty of Physics, Voronezh State University. E-mail: uskov@phys.vsu.ru Le Quang Tuc - Post-graduate Student, Faculty of Physics, Voronezh State University. E-mail: lequangtuc@gmail.com

Design of powerful broadband amplifiers on domestic element base over the range of 1-2 GHz

M.P. Apin - Ph. D. (Econ.), First Deputy General Director, Main Engineer, JSC «SPE «Almaz» (Saratov) A.G. Balabolin - Head of Department, JSC «SPE «Almaz» (Saratov) A.L. Khvalin - Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky L.S. Sotov - Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky

Features of the stratix III FPGA logic

S.F. Tyurin - Dr.Sc. (Eng.), Department «Automation and Telemechanics», Perm National Research Polytechnic University. E-mail: tyurinsergfeo@at.pstu.ru I.I. Bezukladnikov - Ph.D. (Eng.), Department «Automation and Telemechanics», Perm National Research Polytechnic University. E-mail: corrector@at.pstu.ru

Circuit Simultation of DC/DC Converters

V.P. Babenko - Ph.D. (Eng.), Associate Professor, Moscow Technological University (MIREA) E-mail: babenko@mirea.ru V.K. Bityukov - Dr.Sc. (Eng.), Professor, Head of Department, Moscow Technological University (MIREA) E-mail: bitukov@mirea.ru D.S. Simachkov - Senior Lecturer, Moscow Technological University (MIREA) E-mail: vovagr@mail.ru

Adaptive amplifier cascade to handicapes

A.M. Bobreshov - Dr. Sc. (Phys.-Math.), Professor, Head of Department of Electronics, Voronezh State University E-mail: bobreshov@phys.vsu.ru N.N. Mymrikova - Dr. Sc. (Phys.-Math.), Professor, Department of Electronics, Voronezh State University E-mail: ninamymrikova@gmail.com A.A. Jablonskih - Post-graduate Student, Department of Electronics, Voronezh State University E-mail: jablonskihaa@yandex.ru

The operation of transistor series inverter on capacitor loading

A.Ya. Sergeev - Ph. D. (Eng.), Senior Research Scientist, Associate Professor, Department «Radio Engineering and Telecommunication Systems», Peter The Great St.Petersburg Polytechnic University E-mail: acsergeev@yandex.ru

Application of numerical modeling for evaluation of the influence of exploitation parameters and external impacts on the CVC of heterostructure field effect transistor used in radioelectronic equipment for space application

V.G. Tihomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: root@post.etu.spb.ru V.D. Shashurin - Dr.Sc. (Eng.), Professor, Head of Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: chigikov95@mail.ru

Graphene based terahertz transistor

M.V. Davidovich - Dr.Sc. (Phys.-Math.), Professor, Saratov State University E-mail: davidovichmv@info.sgu.ru

The method of analysis of broadband properties of RF power transistors

P.L. Kurshev - Post-graduate Student, Department of Physics of Semiconductors and Microelectronics, Voronezh State University E-mail: mepavel@mail.ru E.N. Bormontov - Dr. Sc. (Phys.-Math.), Professor, Head of Department of Physics of Semiconductors and Microelectronics, Voronezh State University E-mail: me144@phys.vsu.ru

The effect of low temperature annealing on the low-frequency and microwave transistors on the parameters of heterostructures AlGaN / GaN

A.S. Evseenkov - Post-graduate Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana Elektropribor» E-mail: as.evseenkov@gmail.com V.E. Zemlyakov - Ph.D. (Eng.), Associate Professor, National Research University of Electronic Technology - MIET (Moscow) E-mail: vzml@rambler.ru V.G. Tikhomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: v11111@yandex.ru S.A. Tarasov - Ph.D. (Phus.-Math.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: SATarasov@mail.ru Y.M. Parnes - Post-graduate Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: jmparnes@gmail.com N.K. Balovnev - Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: nikolay5556@gmail.com E.E. Kurteev - Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: kusticky@gmail.com A.N. Lubyanoy - Engineer, JSC «Svetlana-Elektronpribor» E-mail: andrey.lubyanoy@gmail.com

Nanoscale silicon field effect transistors for biosensors

N.V. Masalsky – Ph. D. (Phys-Math.), Leader Research Scientist,

Federal scientific center, Research Institute for System Research of the RAS (Moscow)

E-mail: volkov@niisi.ras.ru

Simulation of the "soft breakdown" phenomenon in the microwave HEMT based on gallium nitride

V.G. Tikhomirov – Ph.D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University “LETI”

E-mail: vv11111@yandex.ru

M.K. Popov – Student, Saint-Petersburg Electrotechnical University “LETI”

E-mail:mat68rus@mail.ru

G.A. Gudkov – Laboratorian, Hyperion Ltd. (Moscow)

E-mail: ooo.giperion@gmail.com

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS"

E-mail: volkov@niisi.ras.ru

Nanoelectronic biosensors for oncological diseases diagnostics

T.S. Romanova – Ph.D. (Biol.), Junior Research Scientist, Institute of Biomedical Chemistry (Moscow)

E-mail: romtatyana@mail.ru

K.A. Malsagova – Ph.D. (Biol.), Junior Research Scientist, Institute of Biomedical Chemistry (Moscow)

E-mail: f17-1086@yandex.ru

T.O. Pleshakova – Dr Sc. (Biol.), Deputy Director of Research, Institute of Biomedical Chemistry (Moscow)

E-mail: pleshakova@gmail.com

A.A. Valueva – Junior Research Scientist, Institute of Biomedical Chemistry (Moscow); D. Mendeleev University of Chemical Technology of Russia (Moscow)

E-mail: varuevavarueva@gmail.com

R.A. Galiullin – Lead Programmer, Institute of Biomedical Chemistry (Moscow)

E-mail: rafael.anvarovich@gmail.com

V.S. Ziborov – Leading Specialist, Institute of Biomedical Chemistry (Moscow); Joint Institute for High Temperatures of the RAS (Moscow)

E-mail: ziborov.vs@yandex.ru

O.F. Petrov – Academician of the RAS, Dr.Sc. (Phys.-Math.), Director of the Institute,

Joint Institute for High Temperatures of the RAS (Moscow)

E-mail: ofpetrov@ihed.ras.ru

V.G. Nikitaev – Dr.Sc. (Eng.), Professor, Head of the Department of computer medical system, National Research Nuclear University «MEPhI» (Moscow)

E-mail: kaf46@mail.ru

A.N. Pronichev – Ph.D. (Eng.), First Deputy Head of the Department of Computer Medical Systems, National Research Nuclear University «MEPhI» (Moscow)

E-mail: kaf46@mail.ru

E.A. Druzhinina – Post-graduate Student, National Research Nuclear University «MEPhI» (Moscow)

E-mail: kaf46@mail.ru

Yu.D. Ivanov – Dr.Sc. (Biol.), Professor, Head of the Nanobiotechnology Laboratory,

Institute of Biomedical Chemistry (Moscow)

E-mail: yurii.ivanov.nata@gmail.com

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)

Preparation of the substrate surface of silicon nanowire field-effect transistors to create a biosensor

A.A. Cheremiskina¹, V.M. Generalov², A.S. Safatov³, G.A. Buryak4, A.L. Aseev5

1–4 Federal State Research Institution State Research Center of Virology and Biotechnology «Vector» Rospotrebnadzor (Koltsovo, Novosibirsk Region, Russia)

5 Institute of Semiconductor Physics named after A.V. Rzhanov, Siberian Branch of the Russian Academy of Sciences

Novosibirsk State University (Novosibirsk, Russia)

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS"

E-mail: volkov@niisi.ras.ru

Chaos generator with high energy potential

S.V. Savel’ev, L.A. Morozova

Institute of Radioengineering and Electronics of RAS (Fryazino, Russia)

Ultra-low-noise X-band reference oscillator based dielectric resonator

E.V. Egorov1, S.B. Makarov2, V.M. Malyshev3

1 STC, Ltd. Special Technology Center (St. Petersburg, Russia)

2,3 Peter The Great St. Petersburg Polytechnic University (Saint-Petersburg, Russia)

Sensory properties of fin surrounding gate nanotransistors

N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

High-precision method of calculating and optimization of noise characteristics of broadband photoreceivers

D. F. Zaitsev – Dr.Sc. (Eng.), Chief Designer on Radio Photonics,

JSC “Concern Radio Electronic Technologies”

E-mail: zaysev@yandex.ru

Comparative assessment of circuit layout dimensions in heterogeneous integration and thin films technologies, analysis of active components nonlinearity

F.A. Baron – Dr.Sc. (Eng.), Deputy Chief Technology Officer of Microelectronics Division, JSC «SPE «Radiosviaz» (Krasnoyarsk)
S.Z. Galeev – Deputy Manager of Microelectronics Production Line, JSC «SPE «Radiosviaz» (Krasnoyarsk)
F.V. Zelenov – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
A.B. Ivanov – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
S.O. Konovalov – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
А.N. Masyugin – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
A.V. Strezh – Chief Technologist, JSC «SPE «Radiosviaz» (Krasnoyarsk)
E-mail: filippbaron@mail.ru

Overview of S-parameter measurement methods of microwave transistors and their comparative analysis

S.V. Savelkaev – Dr.Sc. (Eng.), Professor, Siberian State University of Geosystems and Technologies E-mail: sergei.savelkaev@yandex.ru

Measurement of thermal impedance of high-power transistors

V.I. Smirnov – Dr. Sc. (Eng.), Professor, Department «Electronic Instrumentation Design and Technology», Ulyanovsk State Technical University

E-mail: smirnov-vi@ulstu.ru

V.A. Sergeev – Dr. Sc. (Eng.), Associate Professor, Director of Ulyanovsk branch of Kotel'nikov IRE of RAS E-mail: sva@ulstu.ru

A.A. Gavrikov – Ph. D. (Eng.), Senior Research Scientist, Ulyanovsk branch of Kotel'nikov IRE of RAS E-mail: a.gavrikoff@gmail.com

A.M. Shorin – Post-graduate Student, Department «Electronic Instrumentation Design and Technology», Ulyanovsk State Technical University

E-mail: anshant@yandex.ru

Simulation of the broadband thermostabilized amplifier in the range of the frequencies of 1…2 GHz

V.S. Chesakov – Undergraduate, Saratov State University named after N.G. Chernyshevsky

E-mail: seva.chesakov@mail.ru, kof@info.sgu.ru

L.S. Sotov – Dr. Sc. (Eng.), Saratov State University named after N.G. Chernyshevsky E-mail: slskit@mail.ru, kof@info.sgu.ru

Modeling the characteristics of bipolar transistor 2T937 Part I. Static characteristics

M.P. Apin – Ph. D. (Econ.), First Deputy General Director, JSC «SPE «Almaz» (Saratov)

E-mail: info@almaz-rpe.ru, almaz-npp@mail.ru

A.G. Balabolin – Head of Department, JSC «SPE «Almaz» (Saratov)

E-mail: titkov-1973@yandex.ru, almaz-npp@mail.ru

A.L. Khvalin – Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky

Modeling the characteristics of bipolar transistor 2T937 Part II. The frequency characteristics

M.P. Apin – Ph. D. (Econ.), First Deputy General Director, JSC «SPE «Almaz» (Saratov)

E-mail: info@almaz-rpe.ru, almaz-npp@mail.ru

A.G. Balabolin – Head of Department, JSC «SPE «Almaz» (Saratov)

E-mail: titkov-1973@yandex.ru, almaz-npp@mail.ru

A.L. Khvalin – Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky

Synthesis of a pre-amplification path with a series of cascades in order to reduce the nonlinear distortion

A.M. Bobreshov – Dr. Sc. (Phys.-Math.), Professor, Head of Department of Electronics, Dean of Faculty of Physics, Voronezh State University

E-mail: bobreshov@phys.vsu.ru

N.N. Mymrikova – Dr. Sc. (Phys.-Math.), Professor, Department of Electronics, Voronezh State University

E-mail: ninamymrikova@gmail.com

A.A. Yablonskikh – Post-graduate Student, Department of Electronics, Voronezh State University E-mail: jablonskihaa@yandex.ru

On the analytic representation of bipolar transistor characteristics

A.E. Kitaev – Part-programming Engineer, JSC «SCB of radio measuring equipment» ((N. Novgorod)) E-mail: kitaev_a_e@mail.ru

Ultra-wideband microwave voltage-controlled oscillator

A.B. Nikitin – Ph.D.(Eng.), Associate Professor, Higher School of Applied Physics and Space Technologies, Peter The Great St. Petersburg Polytechnic University

E-mail: nikitin@mail.spbstu.ru

E.I. Khabitueva – Post-graduate Student, Higher School of Applied Physics and Space Technologies, Peter The Great St. Petersburg Polytechnic University

E-mail: basilliounderground@mail.ru

Optimization of the characteristics of the power amplifier on domestic bipolar transistors in the range from 1 to 2 GHz

M.P. Apin – Ph.D.(Econ.), First Deputy General of JSC «SPE «Almaz» (Saratov)

G.V. Kudryashov – Head of Scientific and Production Complex, JSC «SPE «Almaz» (Saratov)

A.L. Khvalin – Dr.Sc.(Eng.), Professor, Saratov State University named after N.G. Chernyshevsky

Modern complex devices in terahertz frequency range

A.A. Titkov – Post-graduate Student, Department «Electronic Instruments and Devices»,

Yuri Gagarin State Technical University of Saratov

E-mail: titkov-1973@yandex.ru

A.S. Oleynik – Dr.Sc.(Eng.), Professor, Department «Electronic Instruments and Devices»,

Yuri Gagarin State Technical University of Saratov

E-mail: anatoly.semenovich@gmail.com

M.S. Stepanov – Engineer, JSC «SPE «Almaz» (Saratov) E-mail: little_hans@mail.ru

Improve the reliability of the technology forming the base region of the transistors operational amplifiers

K.V. Popova – Student, Department ЭИУ4, Kaluga branch of the Bauman MSTU

E-mail: krispo1994@yandex.ru

S.A. Adarchin – Ph. D. (Eng.), Associate Professor, Department ЭИУ4, Kaluga branch of the Bauman MSTU E-mail: adarchin@rambler.ru

V.G. Kosushkin – Head of Department ЭИУ4, Kaluga branch of the Bauman MSTU

E-mail: kosushkin@gmail.com

E.G. Peryshkin – Deputy Main Technologist, JSC "VOSHOD"-KRLZ E-mail: pesha1953@gmail.com

Influence of thin dielectric films quality on the integrated circuits reliability

O.N. Glotova – Process Engineer, JSC "VOSHOD"-KRLZ

E-mail: luckyfox13@mail.ru

S.A. Adarchin – Ph. D. (Eng.), Associate Professor, Kaluga branch of the Bauman MSTU E-mail: adarchin@rambler.ru

Ultra-wideband microwave power amplifier

A.V. Bobrov1, V.N. Vyuginov2, I.G. Kiselev3, M.Sh. Tugushev4

1,3,4 JSC “Svetlana-Electronpribor” (St. Petersburg, Russia)

2 LETI (St. Petersburg, Russia)

Vertical CMOS nanotransistors with a conical channel for three-dimensional integrated circuits

Н.В. Masalsky1

1 Federal State Institution "Scientific Research Institute for System Analysis of RAS" (Moscow, Russia)

Sensory properties of a complementary pair of silicon field-effect nanotransistors with cylindrical geometry

N.V Masalsky1

1 Federal State Institution “Scientific Research Institute for System Analysis of the Russian Academy of Sciences” (Moscow, Russia)

Research of the influence of manufacturing errors on the parameters of transistors for monolithic microwave integrated circuits and identification of key factors determining their stability as part of a miniature radiothermograph

V.G. Tikhomirov1, S.V. Chizhikov2

1 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

2 Bauman Moscow State Technical University (Moscow, Russia)

2 LLC Scientific and Production Innovative Company “Hyperion” (Moscow, Russia)

Power amplifier for antenna array

A.N. Zikiy1, V.S. Ivlev2, A.S. Kochubey3

1−3 SC «Taganrog Research Institute of Communications» (Taganrog, Russia)

Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits

A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

Simulation of nanoelectronic device structures based on 2D materials

I.I. Abramov1, N.V. Kalameitsava2, V.A. Labunov3, I.A. Romanova4, I.Yu. Shcherbakova5

1–5 Belarusian State University of Informatics and Radioelectronics (Minsk, Belarus)

Modernization of the quasi-monolithic microwave integrated circuit power ampifier

V.A. Iovdalskiy1, N.V. Ganiushkina2, V.P. Marin3, I.N. Ayupov4, P.A. Storin5

1,2,4,5 JSC «RPC “Istok” named after Shokin» (Moscow region, Fryazino, Russia)
3 MIREA – Russian Technological University (Moscow, Russia)

Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits

A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

1 profgudkov@gmail.com; 2 vv11111@yandex.ru; 3 chigikov95@mail.ru

Reseach of the possibility of improving of biosensors sensitivity based on a gallium nitride nanoheterostructure of a transistor with high electron mobility for using as part of a multiparameter invasive complex

V.G. Tikhomirov1, G.A. Gudkov2, S.V. Agasieva3

1 St. Petersburg State Electrotechnical University «LETI» (Saint-Petersburg, Russia)
2 HYPERION Ltd. (Moscow, Russia)
3 Peoples’ Friendship University of Russia (Moscow, Russia)
1 greenbob53@gmail.com, 3 agasieva-sv@rudn.ru

Generation of powerful short microwave pulses using an amplifier on GaN transistors

S.A. Babunko1, Yu.G. Belov2

1 JSC NPP Salyut-27 (Nizhny Novgorod, Russia)
2 NSTU named after R.E. Alekseev (Nizhny Novgorod, Russia)

1 babunkosa@salut27.ru, 2 bel266@nntu.ru

Circuit design solution and algorithm of digital control of processes for a universal bidirectional transistor module of switching mode voltage converter

V.A. Filin1, A.N. Golovin2, V.S. Smirnov3, V.A. Yurova4

1–4 The Bonch-Bruevich St. Petersburg State University of Telecommunications (St. Petersburg, Russia)

4 North-West State Medical University named after I.I. Mechnikov (St. Petersburg, Russia)

1 filin_vladimir@mail.ru; 2 ece-ffp@sut.ru; 3 cathseugut@yandex.ru; 4 v.a.yurova@sut.ru

Variations in the characteristics of low-voltage logic gates based on vertical silicon nanotransistors with a conical channel

N.V. Masalsky1

1 Research Institute for Systems Research of the Russian Academy of Sciences (Moscow, Russia)
volkov@niisi.ras.ru

Comparative analysis of the impedances of key radio engineering devices with PWM based on a linear model and a closed loop method

V.A. Filin1, L. E. Bayjоnova2, A.N. Golovin3, V.A. Yurova4

1, 3–4 The Bonch-Bruevich St Petersburg State University of Telecommunications (St Petersburg, Russian Federation)

2 Tashkent University of Information Technologies named after Muhammad al-Khwarizmi (Tashkent, Uzbekistan)

4 North-Western State Medical University named after I.I. Mechnikov (St Petersburg, Russian Federation)

1 filin_vladimir@mail.ru; 2 bayjonoval@gmail.com; 3 cathseugut@yandex.ru; 4 v.a.yurova@sut.ru