N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

Silicon fin field nanotransistors attract great attention as a promising tool for the development of compact biosensors due to their high sensitivity, in particular, as a surface charge detector for measuring the pH of a solution. The technological complexity of manufacturing these sensors dictates the need for detailed modeling of the device to optimize all costs. Comprehensive consideration of technological requirements provides a high level of control over technological variations and allows manufacturing real transistors with high accuracy in a wide range of topological parameters.

The purpose of the work is a investigate with the help of TCAD modeling the applicability of silicon fin field surrounding gate nanotransistors gate, made on the basis of the domestic modern silicon-on-insulator (SOI) technological process for the development of compact high-efficiency pH detectors of the solution. TCAD models of nanoscale low-voltage fin silicon transistors have been developed in the TCAD software environment designed for modeling the technological processes of integrated circuit production and their electro-physical characteristics as electrolyte pH detectors have been numerically investigated. It is shown that transistor structures with a width of 150 nm and a height of 40 nm with a reduced doping level have promising sensory characteristics. The main ones are high relative sensitivity, high saturation current, steepness of the subthreshold characteristic (close to ideal), low power consumption. And the prospects of their use for the development of biosensors made according to domestic SOI technology are substantiated. The considered methodology opens up an effective approach to sensor scaling for pH measurement. At the same time, providing high resolution per unit of occupied area with minimal power consumption. These properties are of particular interest for integrated pH bioanalytics based on CMOS technology. The results of the study provide useful recommendations for the development of nanowire.

Masalsky N.V. Sensory properties of fin surrounding gate nanotransistors. Electromagnetic waves and electronic systems. 2021. V. 26. № 6. P. 37−43. DOI: https://doi.org/10.18127/j15604128-202106-04 (in Russian)

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