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Journal Radioengineering №10 for 2017 г.
Article in number:
On the analytic representation of bipolar transistor characteristics
Type of article: scientific article
UDC: 621.382.2/3
Authors:

A.E. Kitaev – Part-programming Engineer, JSC «SCB of radio measuring equipment» ((N. Novgorod)) E-mail: kitaev_a_e@mail.ru

Abstract:

The paper includes the expression with using of Lambert function that makes more exact the Shockley formula for voltage-current characteristic of semiconductor diode. Also the analytic expressions for bipolar transistor characteristics with using of the same function are proposed. The example of common-emitter amplifier calculation is shown. This calculation is applicable to the cases of key mode, amplifier mode and saturation mode for the amplifiers of this kind. The analytic formulas for collector current and collector voltage dependencies on base voltage are received. Also the numerical calculation of these dependencies on input voltage is made for the amplifier with emitter ballasting.

Pages: 189-194
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Date of receipt: 10 февраля 2017 г.