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Journal Radioengineering №1 for 2011 г.
Article in number:
Solution of the Challenges of Designing a Microwave Oscillator with Internal Feedback in the Bipolar Transistor
Authors:
D.M. Gorbachev, E.V. Mazeev, M.A. Fursaev
Abstract:
For the case of a microwave oscillator with internal feedback, the bipolar transistor operating in the lockout mode cutoff current, the following problems of design are reviewed: Determination of the electrical mode parameters of the transistor, providing the desired power output of the generator at a given value of the collector voltage; Definition of baseline data for designing the topology of the output transformer connection and the oscillating system; Determining the values of the parameters of the emitter circuit of the DC to ensure the sustainability of the electric generator in the selected mode. It is shown that a necessary condition for obtaining a negative value of the active components of the input admittance of the transistor is to ensure the resonance frequency of the generated output circuit, which is achieved by choosing conductivity values of the reactive load at the output of the device.
Pages: 42-46
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