A.L. Khvalin1, V.M. Doroshenko2

1 National Research Saratov State University (Saratov, Russia)
2 Yuri Gagarin State Technical University (Saratov, Russia)
1 Khvalin63@mail.ru, 2 Dorvalentina9@gmail.com

Most domestic and foreign transistors, as a rule, do not have computer models compatible with modern automated design systems. To a large extent, this is due to the complexity of solving the corresponding optimization problems to determine the set of parameters of the equivalent transistor model. The relevance of the work is due to the lack of a modern element base in the libraries of known computer CAD systems, which significantly limits the design capabilities of specific devices. The article presents the main stages of modeling the low-noise HEMT transistor FPD6836P70 in computer CAD.

The basic transistor model has more than 60 parameters, the optimization targets are five experimentally measured static and eight frequency (amplitudes and phases of S-parameters in an ultra-wide operating range of up to 26 GHz) characteristics of the FPD6836P70 transistor.

Since existing computer methods for finding optimal solutions do not have a universal algorithm suitable for solving any optimization problem, solving specific optimization problems requires the development of an individual approach. The technical novelty of the solution to the problem presented in the article lies in dividing the general problem into two subtasks: optimization of static and frequency characteristics.

The purpose of the modeling was to obtain the calculated characteristics that are as close as possible to the measured static characteristics of the transistor. The article describes the methodology for modeling static characteristics based on the common basic EEHEMT transistor model.

The article defines a set of 19 parameters of the equivalent circuit of the transistor that affect the static characteristics. Optimal numerical values of the parameters of the equivalent circuit EEHEMT are found, and the results of calculating the family of static characteristics of the transistor are presented. The results of modeling the static characteristics can be used as a first approximation for the subsequent solution of the problem of optimizing the frequency characteristics (S-parameters) of the transistor using the EEHEMT model.

The analysis of the obtained results shows that the calculated static characteristics differ from the measured ones by no more than 5%.

Khvalin A.L., Doroshenko V.M. Simulation of static characteristics of the HEMT transistor. Achievements of modern radioelectronics. 2024. V. 78. № 11. P. 60–66. DOI: https://doi.org/10.18127/j20700784-202411-07 [in Russian]

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