350 rub
Journal Science Intensive Technologies №10 for 2013 г.
Article in number:
Generator of high-voltage nanosecond pulses avalanche transistors
Authors:
M.A. Karpov - Ph. D. (Eng), MIREA
D.V. Nikishin - Post-graduate Student, MIREA
A.V. Shpak - Ph. D. (Eng), MIREA
E.V. Egorova - Ph. D. (Eng), MIREA
E.O. Petrenko - Post-graduate Student, MIREA
S.S. Halimov - Post-graduate Student, MIREA
Abstract:
The results of the test generator, built on one and four avalanche transistors. Analysis of the results of experiments to produce nanosecond pulses avalanche transistor FMMT417 scheme in one of the transistor, as well as on four transistors has certain optimum voltage at which the output pulse is obtained as short, but when you connect with the scheme of Marx steepness of transition process has a maximum at its center.
Pages: 59-62
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