I.I. Abramov1, N.V. Kalameitsava2, V.A. Labunov3, I.A. Romanova4, I.Yu. Shcherbakova5

1–5 Belarusian State University of Informatics and Radioelectronics (Minsk, Belarus)
 

A review of studies on the simulation of nanoelectronics device structures based on 2D materials carried out at BSUIR is given. The proposed review is a continuation and supplement of our previous reviews devoted to the simulation of resonant tunneling device structures based on carbon nanomaterials and graphene, as well as field-effect transistors (FETs) based on single-layer graphene, published earlier [1–3].

In particular, models of FETs based on bilayer graphene and heterostructures based on 2D materials with vertical and horizontal transport are described. The proposed models make it possible to calculate the electrical characteristics of the structures under study, taking into account environmental conditions, structures, and applied bias. Studies on the calculation of the electrostatic potential in the channel of a double-gate graphene field-effect transistor have been carried out, the quantum capacitance values have been calculated depending on the band gap energy in bilayer graphene when a vertical bias is applied to the transistor gates, as well as the current-voltage characteristics (IV-characteristics) of the device.

The model of resonant tunneling structures has been modified according to the possibility of heterostructures containing 2D materials with vertical transport simulation. Several structures based on graphene/hBN, SiO2/MoS2 material systems have been simulated. The influence of various parameters on the IV-characteristics of the studied device structures is shown.

Abramov I.I., Kalameitsava N.V., Labunov V.A., Romanova I.A., Shcherbakova I.Yu. Simulation of nanoelectronic device structures based on 2D materials. Nanotechnology: development and applications – XXI century. 2023. V. 15. № 1. P. 54–68. DOI: https://doi.org/10.18127/ j22250980-202301-05 (in Russian)

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