350 rub
Journal Radioengineering №7 for 2017 г.
Article in number:
Modeling the characteristics of bipolar transistor 2T937 Part II. The frequency characteristics
Type of article: scientific article
UDC: 621.382.3
Authors:

M.P. Apin – Ph. D. (Econ.), First Deputy General Director, JSC «SPE «Almaz» (Saratov)

E-mail: info@almaz-rpe.ru, almaz-npp@mail.ru

A.G. Balabolin – Head of Department, JSC «SPE «Almaz» (Saratov)

E-mail: titkov-1973@yandex.ru, almaz-npp@mail.ru

A.L. Khvalin – Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky

Abstract:

The paper presents a method of modeling the frequency characteristics of bipolar transistor 2T937 based both on measured S-parameters, and on input and output static characteristics (see Part I). The method of modeling the frequency characteristics of the transistor is developed on the example of chip 2T937 and is based on solving the multi-criteria optimization problem. The results of modeling the static characteristics are used as a first approximation. The optimal values of parameters of the Gummel-Pune equivalent circuit are found, and the results of calculations of static and frequency characteristics of the transistor model are presented. The accuracy of modeling the initial experimental characteristics is evaluated. The created model can be used in common CAD systems as a base element for the development of solid-state devices.

Pages: 129-135
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Date of receipt: 28 июня 2017 г.