V.V. Glotov1, I.V. Ostroumov2, I.V. Sviridova3, S.M. Fedorov4

1–4 Voronezh State Technical University (Voronezh, Russia)

1 vadik-livny@mail.ru, 2 vanik07@mail.ru, 3 ri-ss-ka@mail.ru, 4 zar36@yandex.ru

This article presents an approach to the electromagnetic analysis of linear and nonlinear microwave circuits with three active terminals using the finite difference method in the time domain. In this method, the components of the electric field on a three-pin active device are updated by correlating voltage and current with its impedance. This method is applied to the analysis of a linear amplifier that includes a three-pin active device, i.e. a field effect transistor. Investigation of the finite difference method in the time domain in field effect transistor modeling. The results obtained during the experimental study of the proposed approach and the OrCAD PSpice Designer software package are in good agreement, which confirms the correctness of the model. Small discrepancies are due to the numerical variance of the finite difference method in the time domain, as well as the fact that end-to-end transitions were modeled as ideal conductors. When using the finite difference method in the time domain, time and computational costs are reduced during product development. In addition, this approach makes it easy to expand the active device by several cells in the finite difference method in the time domain without significant modifications to the algorithm and without increasing computational complexity

Glotov V.V., Ostroumov I.V., Sviridova I.V., Fedorov S.M. Simulation of microwave three-pin active devices using the finite difference method in the time domain. Electromagnetic waves and electronic systems. 2025. V. 30. № 6. P. 54−59. DOI: https://doi.org/10.18127/j15604128-202506-04 (in Russian)

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