V.I. Smirnov – Dr. Sc. (Eng.), Professor, Department «Electronic Instrumentation Design and Technology», Ulyanovsk State Technical University

E-mail: smirnov-vi@ulstu.ru

V.A. Sergeev – Dr. Sc. (Eng.), Associate Professor, Director of Ulyanovsk branch of Kotel'nikov IRE of RAS E-mail: sva@ulstu.ru

A.A. Gavrikov – Ph. D. (Eng.), Senior Research Scientist, Ulyanovsk branch of Kotel'nikov IRE of RAS E-mail: a.gavrikoff@gmail.com

A.M. Shorin – Post-graduate Student, Department «Electronic Instrumentation Design and Technology»,  Ulyanovsk State Technical University

E-mail: anshant@yandex.ru

The results of measuring the thermal impedance of high-power MOSFET and IGBT transistors are presented. The measurements were carried out with by the measuring device which implements a modulation method of measurement, based on heating the object of measurement with a pulse width modulated power and measuring the response - the variable component of the p-n junction temperature. Determination of the thermal resistance of the object was carried out on the basis of the analysis of the dependence of thermal impedance on frequency of modulation of heating power. The method made it possible to significantly reduce the effect of heating the object case during the measurement and, thereby, to increase the accuracy of thermal resistance «junction-to-case» component measurement.

1. Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method). JEDEC JESD24-3 standard.
2. Power MOSFETs. JEDEC JESD24 standard.
3. Thermal Impedance Measurement for Insulated Gate Bipolar Transistors – (Delta VCE(on) Method). JEDEC JESD24-12 standard.
4. Application Manual Power Semiconductors // SEMIKRON International GmbH. 2015.
5. Current Rating of Power Semiconductors // Vishay Siliconix. Application Note AN-949. 2010.
6. Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow through a Single Path. JEDEC standard JESD51-14.
7. Szekely V., Tran Van Bien. Fine structure of heat flow path in semiconductor devices: a measurement and identification method // Solid-State Electronics. 1988. V. 31. P. 1363−1368.
8. Rencz M., Szekely V., Morelli A., Villa C. Determining partial thermal resistances with transient measurements and using the method to detect die attach discontinuities // SEMITHERM. 2002. P. 15−20.
9. T3Ster - Thermal Transient Tester - Technical information // Mentor Graphics. URL = http://www.flotrend.com.tw/products/st3/t3ster/data/T3Ster_b.pdf.
10. Patent RF № 2572794. Sposob izmereniya teplovogo soprotivleniya perexod–korpus moshhny'x MDP-tranzistorov / Smirnov V.I., Sergeev V.A.,Gavrikov A.A.Vy'dan 05.11.2014. Opubl. 20.01.2016. Byul. 2.
11. Smirnov V.I., Sergeev V.A., Gavrikov A.A. Spektral'ny'j i vremennoj metody' izmereniya teplovogo soprotivleniya poluprovodnikovy'x priborov // Promy'shlenny'e ASU i kontrollery'. 2014. № 10. S. 58−63.
12. Smirnov V., Sergeev V., Gavrikov A. Apparatus for Measurement of Thermal Impedance of High-Power Light-Emitting Diodes and LED Assemblies // IEEE Transactions on Electron Deevices. June 2016. V. 63. № 6. P. 2431−2435.