S.V. Savelkaev – Dr.Sc. (Eng.), Professor, Siberian State University of Geosystems and Technologies E-mail: sergei.savelkaev@yandex.ru

In the article in chronological order are considered: two-signal method of measurement of S-parameters of transistors, modification of this method and, developed on their basis, method of adequate measurement-parameters of the devices. Methods are implemented with coaxial simulator-analyzer amplifiers and oscillators microwave in coherent and mismatched with loads of measuring channels this simulator analyzer. The scope and interrelation of the considered methods with the indication of their advantages and shortcomings are analyzed. Also the technique of normalization S-parameters of the transistor and complex coefficients of reflection of its loads measured in the coaxial measuring path of the simulator-analyzer, with respect to the microstrip path, in which this  device will be used during its operation.

1. Hibel' M. Osnovy vektornogo analiza cepej / Per. s angl. S.M. Smolenskogo. Pod red. U. Fillipp. M.: Izdatel'skij dom MEI. 2009.
2. Izmerenie v «goryachem» rezhime s impul'snymi signalami na analizatore cepej. R&SZVA [Elektronnyj rezhim]. Rezhim dostupa: www.rohdeschwarz.ru/439/ AN001rus_HotS22_pulse.pdf.
3. Root D.E., Horn J., Betts L., Gillease Ch., Verspecht J. H-parametry: novyj princip izmerenij, modelirovaniya i razrabotki nelinejnyh VCh i SVCh komponentov // Kontrol'no-izmeritel'nye pribory i sistemy, kompaniya Agilend Technologies. C. 20–24.
4. Nikulin S.M., Torgovanov A.I. Izmerenie S-parametrov SVCh tranzistorov pri vysokom urovne moschnosti metodom prostranstvenno udalennoj nagruzki // Datchiki i sistemy. 2015. № 4 (191). S. 14–18.
5. Savel'kaev S.V. Metody analiza ustojchivosti aktivnyh SVCh-cepej i izmereniya ih S-parametrov // Metrologiya. 2005. № 4. S. 19–28.
6. Mazumder S.R. Two-signal parameters of transistors / IEEE Trans. 1978. V. MTT-26. № 6. P. 417–420.
7. Li S.H., Bosisio R.G. Automatic analysis of two-port active microwave network / Electronics Letters. 1982. V. 18. № 24. P. 1033–1034.
8. Savel'kaev S.V., Romas'ko S.V. Sposob izmereniya S-parametrov chetyrehpolyusnikov, prednaznachennyh dlya vklyucheniya v mikropoloskovyj trakt / Novosibirsk: Vestnik SGU-GiT. 2017. T. 22. № 2. S. 260–270.
9. Pat. 2653569 RF: MPK7 G01R 27/28 Sposob izmereniya S-parametrov chetyrehpolyusnikov SVCh, prednaznachennyh dlya vklyucheniya v mikropoloskovuyu liniyu / Svel'kaev S.V., Romas'ko S.V. Zayavl. 29.03.2017. Opubl. 11.05.2018. Byul. № 14.
10. Savel'kaev S.V., Romas'ko S.V. Metod izmereniya S-parametrov tranzistorov na imitatore-analizatore usilitelej i avtogeneratorov / Metrologiya. 2017. № 2. S. 19–28. (Savel'kaev S.V., Romas'ko S.V. A method of measuring the S-parameters of transistors on a simulator-analyzer of amplifiers and UNF selfexcited oscillators // Measurement Techniques. April-June, 2017. № 2. P. 31–44).
11. Pat. 2652650 RF: MPK7 G01R 27/28 Sposob adekvatnogo izmereniya S-parametrov tranzistorov na imitatore-analizatore usilitelej i avtogeneratorov SVCh / Svel'kaev S.V., Romas'ko S.V. Zayavl. 29.03.2017. Opubl. 28.04.2018. Byul. № 13.
12. Savel'kaev S.V., Romas'ko S.V., Litovchenko V.A., Zarzheckaya N.V. Teoreticheskie osnovy postroeniya imitatora-analizatora aktivnyh SVCh-cepej / Uspehi sovremennoj radioelektroniki. 2017. № 2. S. 50–61.
13. Savel'kaev S.V. Koaksial'noe kontaktnoe ustrojstvo / Izmeritel'naya tehnika. 2005. № 5. S. 65–68.
14. Savel'kaev S.V. Razrabotka i issledovanie metodov i precizionnyh sredstv izmereniya S-parametrov aktivnyh SVCh-cepej // Diss. … d.t.n. Novosibirsk. 2006.
15. Silaev M.A., Bryancev S.F. Prilozhenie matric i grafov k analizu SVCh ustrojstv. M.: Sov. radio. 1970.