350 rub
Journal Achievements of Modern Radioelectronics №7 for 2009 г.
Article in number:
Problems of Scaling of CMOS VLSI Characteristics
Keywords: CMOS-transistor scaling supply power leakage currents
Authors:
N.V. Masalsky
Abstract:
Achievements of semiconductor VLSI manufacturing techniques simultaneously with increase of a degree of integration complicate a problem of scaling of their physical characteristics. The stated qualitative and quantitative laws of the theory of scaling allow one to solve effectively problems of development and creation of modern electronic devices. At transition to transistors with small length of gate in nanometer areas are more sharply shown the physical restrictions connected to absence of scaling of separate parameters and their critical influence. For ultra thin thickness of working silicon layers of transistors, switching transistors, great value get already quantum effects, in particular effects of dimensional quantization of a power spectrum of carriers.
Pages: 3-27
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