350 rub
Journal Achievements of Modern Radioelectronics №9 for 2011 г.
Article in number:
Analysis of metal-oxide semiconductor field-effect transistors parameters by low temperature
Authors:
A. M. Pilipenko, V. N. Biryukov
Abstract:
The most probable silicon device that can be used at cryogenic temperatures is the silicon metal-oxide semiconductor field-effect transistor (MOSFET). Of course, we can use materials other than silicon, such as GaAs, Ge, etc. However, the silicon MOSFET has a great advantage that the mass production technology established for commercial usage is available for larger-formatted array circuits. For example, in the field of near-infrared astronomy, silicon MOSFETs have already been widely used as readout circuits of near-infrared detector arrays at 15 - 80 K. Additionally, silicon MOSFETs can be operated with low power dissipation, and very suitable as parts of cryogenic readout circuit.
In this work an experimental results of p-MOSFET parameters measurement in temperature range 20 - 80 K was shown. To this object five-parameter static model of MOSFET has been proposed. This model takes into account all primary effects in MOSFETs with long-channel. Technique of parameter optimization was developed. Error of parameters measurement substantially smaller than parameter spread in technological process.
Pages: 66-70
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