N.V. Masalsky – Ph. D. (Phys-Math.), Leader Research Scientist, 

Federal scientific center, Research Institute for System Research of the RAS (Moscow)

E-mail: volkov@niisi.ras.ru

Problem of the statement. Silicon cylindrical field nanotransistors attract great attention as a promising tool for developing compact biosensors due to their hypersensitivity and selectivity, which are due to their exceptional susceptibility to changes in the electrical potential near the surface of the transistor working area (channel). The concept with a surrouding gate is characterized by a two-fold superiority in suppressing short-channel effects (the main mechanisms of degradation of the electro-physical characteristics of field-effect transistors) compared to traditional transistor architectures. The design in question also has an improved sub-threshold characteristic and increased current density in strong inversion mode. Sensors based on it can detect cellular activity with high accuracy, determine exceptionally low concentrations of elements of biological media, pH of analyte molecules without the use of additional markers and with greater sensitivity and in less time than traditional devices.

Aim of the work – to justify the applicability of silicon cylindrical surrouding gate field nanotransistors made on the basis of a domestic modern technological process with topological standards of 65 nm for the development of compact biosensors.

Results. The electro-physical characteristics of transistors with a channel length, which is a sensor element, in the range of

25...65 nm and a radius of 3...10 nm were calculated using computer modeling performed using the TCAD program, intended for modeling the technological processes of integrated circuit production. The possibility of achieving high sensitivity of the sensor element to changes in the control voltage is shown and it is established that the sensitivity depends linearly on the size of the channel. The prospects of using silicon cylindrical field nanotransistors made using domestic technology with topological standards of 65 nm for the development of biosensors are substantiated.

Practical significance. The development and implementation of measurement technologies based on silicon cylindrical field nanotransistors is of interest from both scientific and applied points of view.

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