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Articles by keyword TCAD
Nanoscale silicon field effect transistors for biosensors

N.V. Masalsky – Ph. D. (Phys-Math.), Leader Research Scientist, 

Federal scientific center, Research Institute for System Research of the RAS (Moscow)

E-mail: volkov@niisi.ras.ru

Sensory properties of fin surrounding gate nanotransistors

N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

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Н.В. Масальский – к.ф.-м.н., вед. науч. сотрудник,
Федеральный научный центр «Научно-исследовательский институт системных исследований РАН» (Москва)
E-mail: volkov@niisi.ras.ru

Vertical CMOS nanotransistors with a conical channel for three-dimensional integrated circuits

Н.В. Masalsky1

1 Federal State Institution "Scientific Research Institute for System Analysis of RAS" (Moscow, Russia)

Sensory properties of a complementary pair of silicon field-effect nanotransistors with cylindrical geometry

N.V Masalsky1

1 Federal State Institution “Scientific Research Institute for System Analysis of the Russian Academy of Sciences” (Moscow, Russia)