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Journal Radioengineering №8 for 2018 г.
Article in number:
Modern complex devices in terahertz frequency range
Type of article: scientific article
DOI: 10.18127/j00338486-201808-33
UDC: 621.372.6; 621.375.4
Authors:

A.A. Titkov – Post-graduate Student, Department «Electronic Instruments and Devices», 

Yuri Gagarin State Technical University of Saratov

E-mail: titkov-1973@yandex.ru

A.S. Oleynik – Dr.Sc.(Eng.), Professor, Department «Electronic Instruments and Devices», 

Yuri Gagarin State Technical University of Saratov

E-mail: anatoly.semenovich@gmail.com

M.S. Stepanov – Engineer, JSC «SPE «Almaz» (Saratov) E-mail: little_hans@mail.ru

Abstract:

This paper presents a development and manufacturing of the dual-gate field-effect transistor (FET) 3П612-А1-5 in a form of six-pole in low-level signal operation. Also was solved the problem of 4-pole transformation into multipole. This article also gives a topology of 5-channel power combiner/power divider, in frequency band 4−12, 6−18 GHz, designed according to the travelling wave drawing. Two amplifiers-correctors with operating frequency range 4−12 and 6−18 GHz, aimed for the work together with TWT were covered in the article. The block diagrams, external view, overall dimensions, amplitude and phase-frequency characteristics were mentioned. And also solved the problem of output power leveling of the line solid-state amplifier in common with TWT, in the frequency range to the prescribed level.

Pages: 173-181
References
  1. Majskaya V. Osvoenie teragerczovoj shheli. Poluprovodnikovy'e pribory' vtorgayutsya v submillimetrovy'j diapazon // E'lektronika: NTB. 2011. № 8. S. 74−87.
  2. Titkov A.A., Balabolin A.G., Stepanov M.S., Gur'yanov N.O. Problemy' izmereniya S-parametrov tranzistora 3P612. Poluchenie matriczy' rasseyaniya tranzistora bez vliyaniya soedinitel'ny'x peremy'chek // Materialy' nauch.-texn.konf. «E'lektronny'e pribory' i ustrojstva SVCh», posvyashh. 60-letiyu AO «NPP «Almaz». 2017. S. 158−162.
  3. Balabolin A.G., Titkov A.A., Gur'yanov N.O., Stepanov M.S. Problemy' polucheniya bol'shoj moshhnosti pri mnogokratnom slozhenii aktivny'x SVCh e'lementov. Raschet mnogokanal'ny'x delitelej/summatorov moshhnosti // Materialy' nauch.-texn.konf. «E'lektronny'e pribory' i ustrojstva SVCh», posvyashh. 60-letiyu AO «NPP «Almaz». 2017. S. 154−157.
Date of receipt: 24 мая 2018 г.