A.M. Bobreshov - Dr. Sc. (Phys.-Math.), Professor, Dean of Faculty of Physics, Voronezh State University. E-mail: bobreshov@phys.vsu.ru I.S. Korovchenko - Ph. D. (Phys.-Math.), Associate Professor, Faculty of Physics, Voronezh State University. E-mail: korovchenko@vsu.ru V.A. Stepkin - Ph. D. (Phys.-Math.), Associate Professor, Faculty of Physics, Voronezh State University. E-mail: stepkin@phys.vsu.ru G.K. Uskov - Dr. Sc. (Phys.-Math.), Associate Professor, Faculty of Physics, Voronezh State University. E-mail: uskov@phys.vsu.ru Le Quang Tuc - Post-graduate Student, Faculty of Physics, Voronezh State University. E-mail: lequangtuc@gmail.com

The analysis of electromagnetic compatibility characteristics of the low-noise amplifier based on heterojunction bipolar transistor under exposure of the pulse interference with big amplitude are considered in the paper. Experimental results of the amplifier performance in different modes are adduced. It shows the subnanosecond pulse interference can evoke recoverable failures which is dialing with reducing of the gain. Due to experimental results the calculation of the main characteristics of amplifier electromagnetic compatibility, the coefficient of the recoverable degradation and the upper dynamic range limit of the recoverable degradation, under exposure of pulse interferences is executed. Also characteristics of classic theory of the electromagnetic compatibility, the coefficient of the blocking and the upper dynamic range limit of the blocking, are measured in experimental investigation for different amplifier-s modes. Based on comparison effects of both pulse and monochromatic interferences can be controlled by selection of the amplifier-s modes.

 

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