P.L. Kurshev - Post-graduate Student, Department of Physics of Semiconductors and Microelectronics, Voronezh State University E-mail: mepavel@mail.ru E.N. Bormontov - Dr. Sc. (Phys.-Math.), Professor, Head of Department of Physics of Semiconductors and Microelectronics, Voronezh State University E-mail: me144@phys.vsu.ru

Purpose to work is to develop a universal method of analysis of broadband properties of RF power transistors, using the frequency dependence of the source and load optimal impedance, as well as standard Source and Load Pull contours for a single frequency. The frequency dependence of the transistor-s optimal impedance is proposed to approximate a single point. This point is impedance of equal and minimum mismatching with respect to the two most distant points on this frequency dependence. This impedance makes it possible to synthesize a simple matching circuit consisting of a single reactive element and broadband transformer resistances. From a comparison of matching circuit impedance and the transistor-s optimal impedance is determined by the level mismatch in the entire frequency band. Using this level of mismatch and Load (Source) Pull contours measured at a single frequency determined by the average value of the large-signal parameters of transistor. The comparative results of the calculations and natural experiment with output matching on the example of LDMOS transistor in the frequency band 1−1.6 GHz is obtained. The difference between these results did not exceed 10% in the determination of the level of output power and drain efficiency. This work can be useful for specialists in designing transistor power amplifiers, as well as developers of RF power transistors.

 

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