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Journal Electromagnetic Waves and Electronic Systems №11 for 2012 г.
Article in number:
Technological optimization of discrete attenuators in hybrid integrated and monolithic integrated versions
Authors:
A.G. Gudkov, V.V. Popov
Abstract:
Microstrip discrete attenuators in hybrid integrated and monolithic integrated versions are found application at present. They have a number of advantages in comparison with analog semi-conductor attenuators. Discrete attenuators are widely used in the microwave devices of civil and military-oriented. Increase of productive efficiency should be carried out at all stages of production development and manufacturing that is connected with minimization of industrial expenses which are one of the basic criteria of working out quality of high technological science intensive electronic products. The technological cost of qualified product is a generalizing indicator of designing quality in the limits of the initial in the network. The technological cost of qualified product characterizes by operation factors and technological process of its manufacturing, therefore it is a complex indicator. Complexity also develops depending on the schematic, design and technological decisions accepted at designing. Technological optimization follows directly after parametrical synthesis and device optimization. Technological optimization supposes that the minimum technological cost of hybrid and microwave integrated circuit will be provided if every stripe-geometry element of hybrid and microwave integrated circuit will have the minimum technological cost. It is obvious that it is necessary to take into account of additional constraint appearance. Experimental results show that optimization is effective not only for passive strip elements, but also for the schemes containing semi-conductor components, in particular diodes and transistors. The offered technique realization allows to spend complex synthesis of parameters and topology of a passive subcircuit, having adapted them for stochastic parameters of diodes and transistors. As a result it is essentially (on 10−20 %) to raise yield probability without tuning. It determines economic benefit of technique.
Pages: 42-47
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