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Journal Radioengineering №7 for 2017 г.
Article in number:
Simulation of the broadband thermostabilized amplifier in the range of the frequencies of 1…2 GHz
Type of article:
scientific article
UDC: 621.382.3
Keywords:
bipolar transistor
ultrahigh frequency amplifier
Hummel-Poon's model
temperature stabilizing.
Authors:
V.S. Chesakov – Undergraduate, Saratov State University named after N.G. Chernyshevsky
E-mail: seva.chesakov@mail.ru, kof@info.sgu.ru
L.S. Sotov – Dr. Sc. (Eng.), Saratov State University named after N.G. Chernyshevsky E-mail: slskit@mail.ru, kof@info.sgu.ru
Abstract:
The influence of temperature on gain coefficient and standing wave ratio of the 2 W amplifier based on 2T937 transistor in the range 1−2 GHz are presented. When using emitter stabilizing of amplifying stage the transmission ratio of the amplifier changes within 0.5 dB in the range of temperatures from −40°C to 70°C.
Pages: 122-124
References
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Date of receipt: 28 июня 2017 г.