A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

Problem statement: the amplifying path of the radiothermograph consumes, with transistors available on the market, an unacceptably large amount of energy, which leads to an increase in heat generation and, as a result, to the introduction of additional errors in measurements.

Purpose: to develop a basic transistor for MIC amplifier with reduced power consumption in order to increase the reliability of the radiothermograph.

Results: the optimization of the transistor design made it possible to obtain a calculated characteristic of the steepness, clearly showing the increased amplifying properties of the proposed transistor in the low-current region, which directly leads to the possibility of a significant reduction in current consumption of the entire chip.

Practical significance: a significant increase in the steepness of the transfer characteristic of the proposed transistor design indicates the possibility of using this promising element base as part of microwave radiometers.

The research was carried out with the financial support of the Russian science Foundation in the framework of agreement No. 19-19-00349-П in the theme: “A method and a multichannel multifrequency microwave radiothermography on the basis of monolithic integrated circuits for finding the 3D distribution and dynamics of brightness temperature in the depths of the human body”.

Gudkov A.G., Tikhomirov V.G., Chizhikov S.V. Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits. Radiotekhnika. 2023. V. 87. № 3. P. 166−173. DOI: https://doi.org/10.18127/j00338486-202303-16 (In Russian)

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