F.A. Baron – Dr.Sc. (Eng.), Deputy Chief Technology Officer of Microelectronics Division, JSC «SPE «Radiosviaz» (Krasnoyarsk)
S.Z. Galeev – Deputy Manager of Microelectronics Production Line, JSC «SPE «Radiosviaz» (Krasnoyarsk)
F.V. Zelenov – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
A.B. Ivanov – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
S.O. Konovalov – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
А.N. Masyugin – Process Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk)
A.V. Strezh – Chief Technologist, JSC «SPE «Radiosviaz» (Krasnoyarsk)
E-mail: filippbaron@mail.ru
We are trying to solve two problems by doing some rough estimates. First, we estimate the size reduction of RF transceiver module (RFTM) when transitioning from heterogeneous integration technology to monolithic integration on multilayer ceramic board (MCB). MCB uses thin film passive components and discrete foreign active elements integrated on single ceramic board. We compare heterogeneous integration technology versus MCB based on the net foot print area of RFTM components. At second, we compare nonlinearity of basic types of transistors: MOS, BJT, HEMT, MESFET, JFET. For that we expand their I-V curve formulae into Taylor series. Using the expansion series coefficients we calculate IIP3 for each transistor and compare them accordingly.
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