V.G. Tihomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: root@post.etu.spb.ru V.D. Shashurin - Dr.Sc. (Eng.), Professor, Head of Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: chigikov95@mail.ru

The using of the mathematical modeling methods based on multidimensional numerical calculation models of the transport carriers, thermal processes and dynamical characteristics makes it possible to add, to verify and to explain existing experimental data, to predict the behavior of the device structures when settings change, which is difficult to reproduce experimentally. The numerical modeling of the influence of some exploitation parameters and external impacts on the CVC of SHF field effect transistors with AlGaN/GaN heterostructures (HEMT) was carried out. The necessity of transistor output characteristics prediction demanded construction of models for distribution statistics of carriers in all areas of the heterostructure and model of differential electron mobility, as well as careful tuning of model of full energetic balance of carriers transporting in HEMT channel for consideration of the primal carrier heating and for true description of processes of current transporting with external impacts and in special modes of operation the device. At the first stage of the project the adaptation of numerical models to features of the construction and the device structures technology was carried out, after that the calculations of static current-voltage and capacity-voltage characteristics of HEMT. At the second stage of the project the impact of the defined external factor (radiation intensity) on the conductivity of 2-DEG and some output characteristics of the researched field effect transistor were modeled. The numerical calculation allowed to assume that the influence of the external impact on the transistor-s CVC is quite significant (the current drain reduction is almost 30 %) and it requires additional researches for possible change of the heterostructure and construction of the transistor and for realization of comprehensive technology optimization for the purpose to minimize the influence of the external impacts on the device performance. The results of the researches make it possible to make the conclusion about the possibility of effective using of the GaN HEMTs numerical modeling for the choice of their optimal operation modes.

 

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