350 rub
Journal Electromagnetic Waves and Electronic Systems №5 for 2017 г.
Article in number:
Improve the reliability of the technology forming the base region of the transistors operational amplifiers
Type of article:
scientific article
UDC: 544.034
Keywords:
operational amplifier
the base of the transistors
diffusion
ion implantation
defect
reliability.
Authors:
K.V. Popova – Student, Department ЭИУ4, Kaluga branch of the Bauman MSTU
E-mail: krispo1994@yandex.ru
S.A. Adarchin – Ph. D. (Eng.), Associate Professor, Department ЭИУ4, Kaluga branch of the Bauman MSTU E-mail: adarchin@rambler.ru
V.G. Kosushkin – Head of Department ЭИУ4, Kaluga branch of the Bauman MSTU
E-mail: kosushkin@gmail.com
E.G. Peryshkin – Deputy Main Technologist, JSC "VOSHOD"-KRLZ E-mail: pesha1953@gmail.com
Abstract:
Discusses the effect of technological regimes on the functional properties of products. The statistical analysis of the obtained married, the main reasons for its occurrence. On the basis of the results of the adjustment process mode.
Pages: 30-33
References
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- Chernyaev V.N. Texnologiya proizvodstva integral'ny'x mikrosxem i mikroproczessorov: Uchebnik dlya vuzov. Izd. 2-e, pererab. i dop. M.: Radio i svyaz'. 1987. 464 s.
- Parfenov O.D. Texnologiya mikrosxem: Ucheb. posobie. M.: Vy'sshaya shkola. 1977. 256 s.
Date of receipt: 13 июня 2017 г.