V.P. Zhalnin1, G.A. Moskvin2, A.E. Lisitsa3, D.I. Ermakov4

1–4 Bauman Moscow State Technical University (Moscow, Russia)
1zhalnin@mail.ru, 2georgmos140170@gmail.com, 3lisitsabmstu@gmail.com, 4ermakovdi822@gmail.com

Metal-oxide-semiconductor (MOS) structures are subject to degradation under the influence of ionizing radiation, which leads to changes in their electrical characteristics and a decrease in reliability. This problem is especially relevant in space and nuclear technology, where electronic components operate under conditions of increased radiation.

Objective – to conduct a system analysis of physical processes in radiation-sensitive MOS structures during irradiation and subsequent annealing, and to develop recommendations for increasing their radiation resistance.

The mechanisms of charge generation and capture in the dielectric, the formation of radiation defects on Si/SiO₂ interface. The influence of different types of radiation (gamma quanta, heavy ions) on transistor parameters is analyzed. The efficiency of thermal annealing for restoring the characteristics of MOS structures is estimated. Technological solutions for increasing reliability are proposed, including optimization of manufacturing processes and the use of materials with improved radiation properties.

The obtained results can be used in the development of radiation-resistant electronic components for spacecraft, nuclear power engineering and other areas where work under ionizing radiation conditions is required.

Zhalnin V.P., Moskvin G.A., Lisitsa A.E., Ermakov D.I. Analysis of processes in radiation-sensitive MOSFETS and structures during irradiation and post-radiation annealing. Science Intensive Technologies. 2025. V. 26. № 4. P. 14−25. DOI: https://doi.org/ 10.18127/ j19998465-202504-02 (in Russian)

1. Miller P.A., Fleetwood D.M., Schubert W.K. Radiation-induced charge trapping in MOS devices. Journal of Applied Physics. 1991. V. 69. P. 488–494. https://doi.org/10.1063/1.348909
2. Levin M.N., Bondarenko E.V., Bormontov A.E., Tatarincev A.V., Gitlin V.R. Metodika opredeleniya parametrov radiacionnyh defektov i prognoza radiacionnoj stojkosti MOP-tranzistorov. Pis'ma v ZhTF. 2010. T. 36. Vyp. 15. S. 02–06 (in Russian).
3. Manzi E., Muazu A.A. Radiation Effects in Integrated Circuits, and Radiation Hardening Techniques. Computer Engineering and Intelligent Systems. 2022. V. 13. № 5. P. 21–30. ISSN 2222-1719. https://doi.org/10.7176/CEIS/13-5-04.
4. Moreno J., Godignon P., Maset E., Massetti S. Assessing Radiation Hardness of SiC MOS Structures. Alter Technology Technical Report. Madrid, Spain: European Space Agency. 2023.
5. Sokolov A.A. Obespechenie radiacionnoj stojkosti MOP-tranzistorov: vliyanie odinochnyh effektov. Sovremennaya elektronika. 2015. № 6. S. 45–50 (in Russian).
6. Rau E.I., Tatarincev A.A. Novyj scenarij kinetiki zaryadki dielektrikov pri obluchenii elektronami srednih energij. Fizika tverdogo tela. 2021. T. 63. № 4. S. 483–498. https://doi.org/10.21883/ftt.2021.04.50713.246 (in Russian).
7. Andreev B.V., Stolyarov A.A., Vasyutin M.S., Mihal'kov A.M. Aktivnyj chuvstvitel'nyj element sensora radiacionnyh izluchenij na osnove MDP-struktur s nanorazmernymi dielektricheskimi sloyami. Vestnik MGTU im. N.E. Baumana. Ser.: Priborostroenie. 2010. S. 118–121 (in Russian).
8. Andreev V.V., Bondarenko G.G., Andreev D.V., Stolyarov A.A. Use of MIS Sensors of Radiation in High-Field Electron Injection Modes. Journal of Contemporary Physics (Armenian Academy of Sciences). 2020. V. 55. № 2. P. 144–150. https://doi.org/10.3103/S1068337 22002005X.
9. Andreev D.V., Bondarenko G.G., Andreev V.V. Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 2023. V.17. № 1.
   P. 48–53. https://doi.org/10.1134/S1027451023010056.
10. Nikolaev D.V. Elektrofizicheskie svojstva struktur kremnij-na-izolyatore, izgotovlennyh metodom srashchivaniya i vodorodnogo rassloeniya: Dis. … kand. fiz.-mat. nauk: 01.04.10. Novosibirsk. 2010. 19 s. (in Russian).
11. Levin M.N., Tatarincev A.V., Bondarenko E.V., Bormontov A.E., Gitlin V.R. Prognozirovanie radiacionnoj stojkosti MOP IS v usloviyah nizko-intensivnogo oblucheniya. Kondensirovannye sredy i mezhfaznye granicy. 2010. T. 12. № 3. S. 226–232 (in Russian).
12. Semenov S.V. Ioniziruyushchie izlucheniya v nashej zhizni. Energobezopasnost' i energosberezhenie. 2009. № 2 (in Russian).
13. Abdukadyrova I.H. Radiacionno-termicheskie stimulirovannye effekty v monokristallah korunda. Pis'ma v ZhTF. 2003. T. 29. Vyp. 5. S. 05 (in Russian).
14. Vologdin E.N., Lysenko A.P. Radiacionnye izmeneniya parametrov bipolyarnyh tranzistorov: uchebnoe posobie po discipline «Fizika elektronnyh priborov i sredstv svyazi». M.: NIU VShE. 2018. https://doi.org/10.1063/5.0189167 (in Russian).
15. Popov V. Postradiacionnyj effekt v IS. Nerazrushayushchij kontrol' kachestva IS. Elektronika: Nauka, Tekhnologiya, Biznes. 2002. № 4. S. 45–49.
16. Levin M.N., Bondarenko E.V., Bormontov A.E., Tatarincev A.V., Gitlin V.R. Metodika opredeleniya parametrov radiacionnyh defektov i prognoza radiacionnoj stojkosti MOP-tranzistorov. Pis'ma v ZhTF. 2010. T. 36. Vyp. 15. S. 02–06. https://doi.org/10.15392/2319-0612.2023.2117 (in Russian).
17. Bordoni C., Ciavatti A., Cortinhal M., Pereira M., Cramer T., Barquinha P., Fraboni B. Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors. APL Materials. 2024. 5 March.
18. Mendonçaa E.G., Cavalcanteb T.C., Vazb R.G., Pereira Juniorb E.C.F., Gonçalezb O.L. Experimental method for determining the supply current of a PMOS power transistor for use as a RADFET dosimeter. Brazilian Journal of Radiation Sciences. 2023. P. 2–6. https://doi.org/10.15392/2319-0612.2023.2117.
19. Brown R.R., Home W.E. Space Radiation Equivalence for Effects on Transistors. NASA Contractor Report. 1985. P. 1–45.
20. Chandrashekkhara H.D., Purnima P. Vliyanie temperatury na mezhfaznyj sloj v MOP-strukturah (Pt/TiO2/Si). Kondensirovannye sredy i mezhfaznye granicy. 2023. T. 25. № 3. S. 415–423. https://doi.org/10.17308/kcmf.2023.25/11266 (in Russian).
21. Novikov A.G., Nalivajko O.Yu., Gajduk P.I. Vliyanie rezhimov okisleniya na harakteristiki MOP-kondensatorov s nanokristallami Ge. Ves. Nac. akad. navuk Belarusi. Ser. fiz.-mat. navuk. 2018. T. 54. № 1. S. 119–126 (in Russian).
22. Borodkin I.I., Asessorov V.V., Kozhevnikov V.A., Petrov B.K. Vosstanovlenie porogovyh napryazhenij moshchnyh SVCh kremnievyh polevyh tranzistornyh struktur s pomoshch'yu ul'trafioletovogo oblucheniya i ocenka nadezhnosti priborov na ih osnove. FGUP «Nauchno-issledovatel'skij institut elektronnoj tekhniki», g. Voronezh. Voronezh: Voronezhskij gos. un-t (in Russian).