Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range  UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

Than Phyo Kyaw. Investigation of the effect of doping the GAN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors. Science Intensive Technologies. 2021. V. 22. № 2. P. 16−23. DOI: https://doi.org/10.18127/j19998465202102-02 (In Russian).

1. Uren M.J., Nash K.J., Balmer R.S., Martin T., Morvan E., Caillas N., Delage S.L., Ducatteau D., Grimbert B., De Jaeger J.C. PunchThrough in Short-Channel AlGaN/GaN HFETs. IEEE Transactions on Electron Devices. 2006. V. 53. № 2. P. 395–398.
2. Horio K., Nakajima A. Physical Mechanism of Buffer-Related Current Transients and Current Slump in AlGaN/GaN High Electron Mobility Transistors. Japanese Journal of Applied Physics. 2008. V. 47. № 5. P. 3428–3433.
3. Bisi D., Meneghini M., de Santi C., Chini A., Dammann M., Brückner P., Mikulla M., Meneghesso G., Zanoni E. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements. IEEE Transactions on electron devices. OCTOBER 2013. V. 60. № 10. P. 3166–3175.
4. Kawada Y., Hanawa H., Horio K. Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-k passivation layer. Japanese Journal of Applied Physics. 2017. V. 56. P. 108003.
5. Huang T., Bergsten J., Thorsell M., Rorsman N. Small- and Large-Signal Analyses of Dierent Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs. IEEE Transactions on Electron Devices. 2018. V. 65. Is. 3. P. 908–914.
6. Bergsten J., Chen J.-T., Gustafsson S., Malmros A., Forsberg U., Thorsell M., Janzen E., Rorsman N. Performance Enhancement of Microwave GaN HEMTs Without an AlN-exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process. IEEE Transactions on Electron Devices. 2015. V. 63. Is. 1. P. 333–338.
7. Fariza A., Lesnik A., Neugebauer S., Wieneke M., Hennig J., Blasing J., Witte H., Dadgar A., Strittmatter A. Leakage currents and Fermi-levels hifts in GaN layers up on iron and carbon-doping. Journal of Applied Physics 2017. V. 122. P. 025704.
8. Poblenz C., Waltereit P., Rajan S., Heikman S., Mishra U.K., Speck J.S. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors. J. Vac. Sci. Technol. 2004. V. B22. P. 1145.
9. Martynov YA.B., Sinkevich V.F. Lavinnyj proboj i lavinno-inzhekcionnaya neustojchivost' v AlGaN-GaN polevyh tranzistorah/ Elektronika i mikroelektronika SVCH. 2018. T. 1. S. 53–57 (In Russian).
10. Kozlov N.A., Sinkevitch V.F., Vashchenko V.A. Isothermal current instability and local breakdown in GaAs FET. Electron. Lett. 1992. № 28. С. 1265–1267.
11. Martynov Y. B., Tager A.S. Isothermal electric breakdown in MESFET’s and MODFET’s. 19’th Workshop on Compound Semiconductor Devices and Integrated Circuits. Stockholm, Sweden. May 21–24. 1995.
12. Kozlov N.A., Martynov Y.B., Sinkevitch V.F., Tager A.S., Vashchenko V.A. Negative differential conductivity and isothermal drain breakdown of GaAs MESFET’s. IEEE Transactions on Electron Devices. 1996. V. ED-43. № 4. P. 513–518.
13. Shinya Akiyama, Masahiro Kondo, Leona Wada, Kazushige Horio. Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer’s acceptor density. Japanese Journal of Applied Physics. 2019. V. 58. P. 068003.
14. Fariza A., Lesnik A., Neugebauer S., Wieneke M., Hennig J., Blasing J., Witte H., Dadgar A., Strittmatter A. Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping, Journal of Applied Physic. 2017. V. 122. P. 025704.
15. Koller Ch., Pobegen G., Ostermaier C., Huber M., Pogany D. The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers. Applied Physics Letters. 2017. V. 111. № 3. P. 1–6.