O.R. Kuzichkin1, A.V. Kurganova2, A.A. Mukhtarova3, A.P. Khersonsky4

1–4 Bauman Moscow State Technical University (Moscow, Russia)
1 oldolkuz@yandex.ru

The paper provides a systematic review of the evolution, operational principles, and modifications of FinFET (Fin Field-Effect Transistor) technology, with a focus on its use in the design of ionizing radiation sensors. The transition from traditional planar MOSFETs to FinFETs has enabled further device scaling, improved electrostatic control, and reduced leakage currents, addressing the fundamental limitations of previous generations. The review highlights historical milestones, structural features of FinFETs, and industrial implementation by leading semiconductor companies. Special attention is paid to modern modifications, such as multi-fin architectures, Gate-All-Around (GAAFET), nanosheets, and vertical and complementary FETs (CFET, VTFET). The principles of using FinFET and its modifications as sensitive elements in RADFET-type dosimeters and ionizing radiation sensors are discussed, including experimental and simulation data. The practical significance of the study lies in systematizing the approaches to improving radiation hardness and sensitivity, and the prospects for further scaling and sensor integration.

Kuzichkin O.R., Kurganova A.V., Mukhtarova A.A., Khersonsky A.P. Analysis of the Applicability of FinFET Transistors for Ionizing Radiation Sensor Design. Science Intensive Technologies. 2025. V. 26. № 5. P. 5−16. DOI: https://doi.org/ 10.18127/j19998465-202505-01 (in Russian)

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