V.G. Tikhomirov1, G.A. Gudkov2, S.V. Agasieva3

1 St. Petersburg State Electrotechnical University «LETI» (Saint-Petersburg, Russia)
2 HYPERION Ltd. (Moscow, Russia)
3 Peoples’ Friendship University of Russia (Moscow, Russia)
1 greenbob53@gmail.com, 3 agasieva-sv@rudn.ru

Problem Statement: One of the main problems of the traditional GaN HEMT transistor design for a biosensor is the large thickness of the barrier layer that screens the area with the analyte. The thickness of the barrier layer is determined by calculating a sufficient voltage in the crystal to produce a strong piezopolarization effect and obtain a high concentration of electrons of the two-dimensional gas in the channel.

Aim: There were found ways to purposefully control the properties of the barrier layer of the AlGaN/GaN nanoheterostructure to reduce its thickness while maintaining the high sensitivity of the biosensor. The presented work is aimed at finding the optimal design of a highly sensitive multiparameter invasive biosensor based on an AlGaN/GaN HEMT transistor

Results: Some heterostructures with a new barrier layer design, consisting of many nanolayers with a precisely calculated composition gradient were presented. It was made based on the results of a numerical analysis of the distribution of electrons of a two-dimensional gas in the channel and the influence of different barrier layer designs on the sensitivity of the drain current to changes in the state of the surface, d.

Practical significance: The proposed special heterostructures in the system of wide-gap nitride materials of the third group for use in biosensors have key advantages in that the increased sensitivity of the new biosensor opens up the possibility of using sensors based on it built into the body, which are powered by minimal voltage and provide operation in the early detection of dangerous antibodies or other objects.

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