V.G. Tikhomirov – Ph.D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University “LETI”

E-mail: vv11111@yandex.ru

M.K. Popov – Student, Saint-Petersburg Electrotechnical University “LETI”

E-mail:mat68rus@mail.ru

G.A. Gudkov – Laboratorian, Hyperion Ltd. (Moscow)

E-mail: ooo.giperion@gmail.com

Problem statement. The phenomenon of a breakdown between the source and drain electrode with a closed transistor was detected with the improvement of the growth quality of the buffer layer of unalloyed gallium nitride in the microwave HEMT based on GaN. Eliminating the phenomenon of "soft breakdown" in the microwave HEMT based on GaN will increase the efficiency of the transistor in the amplifying mode.

Aim of the work – to find ways to eliminate the phenomenon of source- drain “soft breakdown” in the microwave HEMT based on GaN.

Results. Prevention methods of the phenomenon of “soft breakdown” are considered. Numerical modeling of promising ways for elimination the source- drain breakdown phenomenon in HEMT based on gallium nitride is performed. Conclusions of using these methods to prevent the occurrence of the breakdown phenomenon are given.

Practical significance. The considered methods for elimination the source- drain breakdown phenomenon in HEMT based on GaN allow to increase the efficiency of the device in the amplifying mode, working in class AB. There should also be expected an increasing of the efficiency of multistage amplifiers based on optimized transistor structures.

1. Uren M.J., D Hayes.G., Balmer R.S. et al. Control of Short-Channel Effects in GaN/AlGaN HFETs. Proceedings of the 1st European Microwave Integrated Circuits Conference, Manchester, UK. 2006. 
2. Meneghesso G., Meneghini M., Zanoni E. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview. Japanese Journal of Applied Physics. 2014. V.53. № 10.
3. Agasieva S.V., Gudkov A.G., Leushin V.Yu. i dr. Povyshenie nadezhnosti i kachestva GIS i MIS SVCH. Kn. 1. Pod red. A.G. Gudkova i V.V. Popova. M.: OOO «Avtotest». 2012. 212 s. (In Russian).
4. Agasieva S.V., Gudkov A.G., Leushin V.Yu. i dr. Povyshenie nadezhnosti i kachestva GIS i MIS SVCH. Kn. 2. Pod red. A.G. Gudkova i V.V. Popova. M.: OOO «Avtotest». 2013. 214 s. (In Russian).
5. Gudkov A.G. Metodologiya kompleksnoj tekhnologicheskoj optimizacii parametrov SVCH-priborov na osnove geterostruktur. Nanotekhnologii: razrabotka, primenenie – XXI vek. 2019. T. 11. № 2. S. 5–25. DOI: 10.18127/j22250980-201902-01 (In Russian).
6. V'yuginov V.N., Grozina M.I., Gudkov A.G. i dr. Monolitnye integral'nye ustrojstva SVCH. Nanotekhnologii: razrabotka, primenenie – XXI vek. 2014. T. 6. № 3. S. 37–55 (In Russian).
7. Gudkov A.G., V'yuginov V.N., Tihomirov V.G., Zybin A.A. Issledovanie metodom matematiche-skogo modelirovaniya VAH mnogoparametricheskih biosensorov na osnove HEMT-tranzistorov bez zatvora. Nanotekhnologii: razrabotka, primenenie – XXI vek. 2016. T. 8. № 1. S. 15–20 (In Russian).
8. Gudkov A.G., SHashurin V.D., CHizhikov S.V. Issledovanie vliyaniya teplovyh vozdejstvij na harakteristiki HEMT-tranzistorov i SVCH MIS MSHU na ih osnove. Nanotekhnologii: razrabot-ka, primenenie – XXI vek. 2018. T.10. № 3. S. 32–36. DOI: 10.18127/j22250980-201803-04 (In Russian).
9. V'yuginov V.N., Gudkov A.G., Vidyakin S.I. i dr. Issledovanie chuvstvitel'nosti parametrov maloshumyashchih usilitelej k perepadam temperatury. Radiotekhnika. 2016. Vyp. 1. C. 107–109 (In Russian).
10. V'yuginov V.N., Gudkov A.G., Vidyakin S.I. i dr. Metodika i apparatura dlya izmereniya nizko-chastotnogo shuma. Radiotekhnika. 2016. Vyp. 5.  C. 152–154 (In Russian).
11. V'yuginov V.N., Gudkov A.G., Dobrov V.A. i dr. Geterostrukturnaya SVCH-elektronika v Rossii. Elektromagnitnye volny i elektronnye sistemy. 2012. T. 17. № 1. S. 4–9 (In Russian).