Journals
Books
Articles by keyword silicon
Field-Effect Transistor on the Basis of Silicon Nanowire
V.A. Krupenin, D.E. Presnov, V.S. Vlasenko, S.V. Amitonov
Investigation of Structural-phase Transformations and Optical Properties of Composites on the Basis of Silicon Nanoclusters Embedded in Silicon Oxide Matrix
V.N. SEMINOGOV, V.I. SOKOLOV, V.N. GLEBOV, A.M. MALYUTIN, E.V. TROITSKAYA, S.I. MOLCHANOVA, A.S. AHMANOV, V.N. PANCHENKO, V.YU. TIMOSHENKO, D.M. ZHIGUNOV, P.A. FORSH, O.A. SHALYGINA, N.E. MASLOVA, P.K. KASHKAROV
Control of Spectral Sensitivity and Resolution of Silicon Multipixel Photodetectors
Tishin Yu. I., Vanyushin I. V., Gergel - V. A., Zimoglyad V. A
About formation of macroscopical ledges on prismatic surface of silicon a wire
V.A. Nebol-sin, A.I. Dunaev, A.A. Dolgachev, M.A. Zavalishin
Reflective Properties of Fibonacci Multilayer Systems Based on Nanostructured Silicon
Grushina N.V., Zotov A.M., Korolenko P.V., Mishin A.Y.
Silicon nanopore size Determination bu positron annygilation spectroscopy
Chaplygin Yu.A., Grafutin V.I., Prokopev E.P., Timoshenkov S.P.
Physical Singularities of Graphene Interconnects for Nanotransistors VLSI
V. A. Goryachev
Influence of External Electric Field on Ionization Efficiency and Organic Ions Energy Distribution in SALDI Method
A.V. Pento, S.M. Nikiforov
NANOTECHNOLOGICAL FORMATION OF FUEL CELLS ELECTRODES FOR RADIOELECTRONICS
N.A. Yashtulov
Effect of laser on formation of nanocrystals embedded in amorphous silicon and diamond
A.A. Khomich
Defining of parameters of spherical and cylindrical nano-objects in silicon by positron annihilation spectroscopy
Yu.A. Chaplygin, Yu.F. Kozlov, V.I. Grafutin, S.P. Timoshenkov, E.P. Prokopiev, Yu.V. Funtikov
Photoelectrical properties of multi layers silicon-phthalocyanine nanosized structures
L.G. Pakhomov, D.A. Prjakhin, V.V. Travkin, P.A. Luchnikov
Molecular structure and morphology of vacuum silicone coatings prepared by plasma chemical synthesis
M.A. Yarmolenko, A.A. Rogachev, P.A. Luchnikov, A.V. Rogachou, D.L. Gorbochev
Influence of process variable on properties of silicon nitride nano-thick films, deposited in inductively coupled plasma
A.E. Anurov, A.A. Danilov, A.A. Zhukov
Development of new technology of creation of field cathodic matrixes
V.Ya. Shanigin, R.K. Yafarov, S.Yu. Suzdaltsev
Generation of mid-infrared radiation in pulsed regime of a dual-wavelength vertical external cavity surface-emitting laser
M.Yu. Morozov, Yu.A. Morozov, I.V. Krasnikova, L.A. Kochkurov
Field-Effect Transistor on the Basis of Silicon Nanowire
D.E. Presnov, S.V. Amitonov, V.A. Krupenin
Structure of SiC and C nano-sized films on Si substrates synthesised by magnetron and ion-beam target sputtering
I.K. Beysembetov, K.Kh. Nusupov, N.B. Beysenkhanov, S.K.Zharikov, B.K. Kenzhaliev, T.K. Akhmetov, R. Ivlev
Research of influence of the microwave plasma micromachining on nanostructuring carbon on silicon (100) crystals
V.Ya. Shanigin, R.K. Yafarov
Relevant Characteristics of Epitaxial Growth Technology of Microwave and RF PIN-Diodes at JSC «Optron» and its Perspectives
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
T.P. Kolmakova - Ph.D. (Eng.), Production Site Manager, JSC «Optron»
M.V. Mezhennyi - Assistant of Production Site Manager, JSC «Optron»
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
A.S. Drenin - Senior Engineer of Design Department, JSC «Optron». E-mail: dasnew@mail.ru
P.B. Lagov - Ph.D. (Eng.), Associate Professor of the Chair for Semiconductor Electronics and Semiconductor Physics, MISiS. E-mail: lagov2000@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Formation and structure of nanosized layer of silicon carbide on silicon by implantation of high doses of carbon ions
I.K. Beysembetov, K.Kh. Nusupov, N.B. Beysenkhanov, S.K.Zharikov, B.K. Kenzhaliev, T.K. Akhmetov
The correspondence between IR spectra of valence Si-H vibrations and structure of the (SiH)X groups, Х = 1 - 3, in the cages of microcrystalline hydrogenated silicon
А. V. Larin - Leading Research Scientist, Department of Chemistry, Lomonosov Moscow State University. E-mail: nasgo@yandex.ru, 916-486-4660
A. A. Rybakov - Junior Research Scientist, Department of Chemistry, Lomonosov Moscow State University. E-mail: rybakovy@gmail.com
Nanostructured TiV getter coatins
S.P. Timoshenkov - Dr. Sc. (Eng.), Professor, Head of Microelectronics Department, National Research University of Electronic Technology (MIET) (Moscow, Russia). E-mail: spt@miee.ru
D.S. Gaev - Ph.D. (Eng.), Associate Professor, Kabardino-Balkarian State University (KBSU) (Nalchik, Russia). E-mail: dahir@mail.ru
A.N. Boyko - Ph.D. (Eng.), Associate Professor, Microelectronics Department, National Research University of Electronic Technology (MIET) (Moscow, Russia). E-mail: ant_nico@mail.ru
R.R. Galiullin - Ph.D. (Eng.), Kabardino-Balkarian State University (KBSU) (Nalchik, Russia). E-mail: svd5555@mail.ru
Composite polymer-polymer nanostructures based on polyaniline for sensors sorption
M.A. Yarmolenko - Ph.D. (Eng.), Senior Research Scientist, State University n.a. F. Skorina (Gomel?, Belarus)
А.I. Egorov - Ph.D. (Eng.), Associate Professor, State University n.a. F. Skorina (Gomel?, Belarus)
P.A. Luchnikov - Head of Laboratory, MIREA
A.V. Rogachev - Corresponding Member, Dr.Sc. (Chem.), Professor, State University n.a. F. Skorina (Gomel?, Belarus)
Liu Zhubo - Post-graduate Student, State University n.a. F. Skorina (Gomel?, Belarus)
Dependence of electroconductivity a-Si:H/c-Si structures on preliminary plasma treatment of single-crystalline silicon
D.V. Nefedov - Ph.D. (Eng.), Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences. E-mail: nefedov_dv@rambler.ru
S.Y. Suzdaltsev - Ph.D. (Eng.), Senior Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
The current state and the prospects of microwave device development at JSC «Svetlana»
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
Semi-insulating 6H-SiC wafers for modern electronics
A. A. Lebedev - D.Sc. (Phys.-Math.), Professor, FTI named after A. F. Ioffe, St.-Peterburg. E-mail: Shura.lebe@mail.ioffe.ru
S. V. Belov - FTI named after A. F. Ioffe, St.-Peterburg. E-mail: Sergey@mail.ioffe.ru
S. P. Lebedev - Junior Research Scientist, FTI named after A. F. Ioffe, St.-Peterburg
D. P. Litvin - Research Scientist, FTI named after A. F. Ioffe, St.-Peterburg I. P. Nikitina - Senior Engineer, FTI named after A. F. Ioffe, St.-Peterburg. E-mail: irina.nikitina45@gmail.com
A. V. Vasiliev - Deputy General Director, Yu. N. Makarov - Ph.D. (Phys.-Math.), General Director
S. S. Nagalyuk - Leading Engineer
A. N. Smirnov - D.Sc. (Phys.-Math.), Senior Research Scientist, FTI named after A. F. Ioffe, St.-Peterburg. E-mail: Alex.Smirnov@mail.ioffe.ru
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
V. N. Vyuginov - Ph.D. (Eng.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
R. G. Shifman - Deputy Director - Head of SCD, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: okb@svetlana-ep.ru
Yu. S. Kuzmichev - Head of Laboratory, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: okb@svetlana-ep.ru
N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
O. V. Venediktov - Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: venoleg@gmail.com
The production technology of SiC bulk crystal slicing
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
V. N. Vyuginov - Ph.D. (Eng.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
The optimization of the mechanical surface processing technology of SiC wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
V. N. Vyuginov - Ph.D. (Eng.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
The production development of finish surface processing technology of SiC epi-ready wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
Resistivity measuring methods of the semi-insulating SiC wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
The temperature effect on resistivity of SiC wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
Compact autonomous subnanosecond pulse generator for UWB systems
A.V. Afanasyev - Ph. D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University «LETI»
B.V. Ivanov - Ph. D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University «LETI». E-mail: bvivanov@yandex.ru
V.A. Ilyin - Ph. D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University «LETI». E-mail: ilyicmid@gmail.ru
A.F. Kardo-Sysoev - Dr. Sc. (Phys.-Math.), Leading Research Scientist, Ioffe Physical-Technical Institute (St Petersburg). E-mail: alx@helen.ioffe.ru
V.I. Tihomirov - Engineer, Saint-Petersburg Electrotechnical University «LETI». E-mail: cmid@inbox.ru
A.A. Smirnov - Engineer, Research Institute «Vector» (Saint Petersburg). E-mail: gr4211@mail.ru
Semi-insulating 6H-SiC wafers for modern electronics
A. A. Lebedev - D.Sc. (Phys.-Math.), Professor, FTI named after A. F. Ioffe, St.-Peterburg. E-mail: Shura.lebe@mail.ioffe.ru
S. V. Belov - FTI named after A. F. Ioffe, St.-Peterburg. E-mail: Sergey@mail.ioffe.ru
S. P. Lebedev - Junior Research Scientist, FTI named after A. F. Ioffe, St.-Peterburg
D. P. Litvin - Research Scientist, FTI named after A. F. Ioffe, St.-Peterburg I. P. Nikitina - Senior Engineer, FTI named after A. F. Ioffe, St.-Peterburg. E-mail: irina.nikitina45@gmail.com
A. V. Vasiliev - Deputy General Director
Yu. N. Makarov - Ph.D. (Phys.-Math.), General Director
S. S. Nagalyuk - Leading Engineer
A. N. Smirnov - D.Sc. (Phys.-Math.), Senior Research Scientist, FTI named after A. F. Ioffe, St.-Peterburg. E-mail: Alex.Smirnov@mail.ioffe.ru
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg V. N. Vyuginov - Ph.D. (Phys.-Math.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
R. G. Shifman - Deputy Director - Head of SCD, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: okb@svetlana-ep.ru
Yu. S. Kuzmichev - Head of Laboratory, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: okb@svetlana-ep.ru
N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
O. V. Venediktov - Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: venoleg@gmail.com
The optimization of the mechanical surface processing technology of SiC wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg V. N. Vyuginov - Ph.D. (Phys.-Math.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
The production technology of SiC bulk crystal slicing
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
V. N. Vyuginov - Ph.D. (Phys.-Math.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
Resistivity measuring methods of the semi-insulating SiC wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
The production development of finish surface processing technology of SiC epi-ready wafers
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
Quantitative determination of silicon and zinc in A new pharmacologically active silicon-zinc-containing hydrogel
I.N. Shtan-ko - Junior Research, Laboratory of Organic Materials, Postovsky Institute of Organic Synthesis Ural Brunch of RAS (Ekaterinburg). E-mail: intosova@gmail.com
A.N. Bondarev - Post-graduate Student, Laboratory of Oganic Materials, Postovsky Institute of Organic Synthesis Ural Brunch of RAS (Ekaterinburg). E-mail: alex.ural@mail.ru
T.G. Khonina - Dr.Sc. (Chem.), Leading Research, Laboratory of Organic Materials, Postovsky Institute of Organic Synthesis Ural Brunch of RAS (Ekaterinburg). E-mail: khonina@ios.uran.ru
N.I. Moskalenko - Ph.D (Chem.), Senior Research, Laboratory of Electrochemical Material Science, Institute of High Temperature Electrochemistry Ural Brunch of RAS (Ekaterinburg). E-mail: n.moskalenko@ihte.uran.ru
The production technology of SiC bulk crystal slicing
V.V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg V.N. Vyuginov - Ph.D. (Phys.-Math.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru N.K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
O.V. Losev and ways of development of Russian microelectronics in the 21st century
S.A. Gilyov - Leading Engineer, Museum of science «Nizhny Novgorod Radiolaboratory», Lobachevsky State University of Nizhny Novgorod (Nizhny Novgorod). E-mail: serangil-nrl@yandex.ru M.A. Novikov - Ph. D. (Phys.-Math.), Leading Research Scientist, Institute for Physics of Microstructures of RAS (Nizhny Novgorod). E-mail: mnovik@ipm.sci-nnov.ru A.A. Potapov - Dr. Sc. (Phys.-Math.), Professor, Main Research Scientist, Kotel\'nikov IRE of RAS (Moscow); President of cooperative Chinese-Russian laboratory of informational technologies and signals fractal processing (China, Guanzhou). E-mail: potapov@cplire.ru A.E. Rassadin - co-ordinator of united scientific and educational programmes of Nizhny Novgorod regional division of A.S. Popov-s STSREC (Nizhny Novgorod). E-mail: brat_ras@list.ru
Features of phase interfaces in nanosized polymer layers of planar Si-PTFE-PE+AlCl3 heterostructure
A.A. Rogachev - Ph.D. (Eng), Senior Research Scientist, Belarusian State University of Transport, Homel A.I. Egorov - Ph. D.(Eng), Senior Research Scientist, Francysk Skaryna Homiel State University Р.А. Luchnikov - Senior Research Scientist, Moscow State University of Information Technologies, Radioengineering and Electronics Liu Zhubo - Senior Research Scientist, Francysk Skaryna Homiel State University
Microwave monolitic integrated curcuit switche on the SiC pin diodes
V.N. Vyuginov - Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov - Dr. Sc. (Eng.), Professor, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com Yu.S. Kuzmichev - Head of Laboratory, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: dobrov@svetlana-ep.ru
Composition of silicon-carbonic of domains on crystals of silicon (100)
V.Ya. Shanygin - Senior Engineer, Saratov branch of Kotelnikov IRE RAS. E-mail: vitairerun@mail.ru R.K. Yafarov - Dr.Sc. (Eng.), Head of Laboratory, Saratov branch of Kotelnikov IRE RAS S.Yu. Suzdaltsev - Ph.D. (Eng.), Senior Research Scientist, Saratov branch of Kotelnikov IRE RAS D.V. Nefedov - Ph.D. (Eng.), Research Scientist, Saratov branch of Kotelnikov IRE RAS
Analysis of the low-resistance contact of the system titanium-nickel with strongly doped silicon of N type
A.V. Skiper - Senior Lecturer, Kaluga branch of the Bauman MSTU. E-mail: skiper60@yandex.ru N.S. Lazarev - Student, Kaluga branch of the Bauman MSTU. E-mail: lazarevnikolay05@gmail.com V.S. Zaionchkovskiy - Ph. D. (Phys.-Math.), Associate Professor, Kaluga branch of the Bauman MSTU. E-mail: vz48@post.ru I.A. Rastorguyev - Student, Kaluga branch of the Bauman MSTU. E-mail: rastorguew94@gmail.com
Optical properties of hybrid composites based on silica nanoparticles, silver and macrocyclic pigments
A.A. Revina - Dr. Sc. (Chem.), Professor, Leading Research Scientist, A.N. Frumkin Institute of Physical chemistry and Electrochemistry RAS (Moscow). E-mail: alex_revina@mail.ru Y.V. Smirnov - Post-graduate Student, «National Research University «MPEI» (Moscow). E-mail: smirnovyurv@mail.ru A.G. Cherednichenko - Ph. D. (Chem.), Senior Research Scientist, D.Mendeleev University of Chemical Technology of Russia. E-mail: sorbotek@yandex.ru M.G. Tedoradze - Ph. D. (Chem.), Senior Research Scientist, A.N. Frumkin Institute of Physical chemistry and Electrochemistry RAS (Moscow). E-mail: tedoradze_m@mail.ru
Plasmochemical modification of field emission properties of crystals of silicon of various types of conductivity
R.K. Yafarov - Dr. Sc. (Eng.), Professor, Saratov branch of Kotel\'nikov IRE of RAS E-mail: pirpc@yandex.ru S.Yu. Suzdaltsev - Ph. D. (Eng.), Saratov branch of Kotel\'nikov IRE of RAS E-mail: suzdaltsevsy@rambler.ru V.Ya. Shanygin - Ph. D. (Eng.), Research Scientist, Saratov branch of Kotel\'nikov IRE of RAS E-mail: vitairerun@mail.ru
Formation of strained and highly doped germanium layers
R.I. Batalov - Ph.D. (Phys.-Math.), Senior Research Scientist, E.K. Zavoyskii Kazan Physical-Technical Institute of RAS E-mail: batalov@kfti.knc.ru R.M. Bayazitov - Dr.Sc. (Phys.-Math.), Leading Research Scientist, E.K. Zavoyskii Kazan Physical-Technical Institute of RAS, Kazan State Power Engineering University E-mail: batalov@kfti.knc.ru I.A. Faizrakhmanov - Dr.Sc. (Phys.-Math.), Chief Research Scientist, E.K. Zavoyskii Kazan Physical-Technical Institute of RAS E-mail: batalov@kfti.knc.ru G.D. Ivlev - Ph.D. (Phys.-Math.), Senior Research Scientist, Belarussian State University, Minsk, Belarus
A Dry S-Band High-Power Load
S.V. Kuzikov - Head of Laboratory, Institute of Applied Physics of the RAS, Nizhny Novgorod E-mail: kuzikov@appl.sci-nnov.ru A.A. Vikharev - Research Scientist, Institute of Applied Physics of the RAS, Nizhny Novgorod E-mail: alvikharev@appl.sci-nnov.ru Yu.Yu. Danilov - Senior Research Scientist, Institute of Applied Physics of the RAS, Nizhny Novgorod E-mail: danilov@appl.sci-nnov.ru Yu.V. Rodin - Senior Engineer, Institute of Applied Physics of the RAS, Nizhny Novgorod E-mail: wish26@yandex.ru S.V. Shchelkunov - Research Scientist, Physics Department, Yale University, New Haven, USA E-mail: sergey.shchelkunov@yale.edu
Influence of potential of displacement at the processing microwave plasma of various gases on morphological and field emission properties of plates Si (100) p-type
V.Ya. Shanygin - Ph.D. (Eng.), Senior Engineer, Kotel\'nikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences (Saratov Branch) R.K. Yafarov - Dr.Sc. (Eng.), Нead of Laboratory, Kotel\'nikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences (Saratov Branch) S.Yu. Suzdaltsev - Ph.D. (Eng.), Senior Research Scientist, Kotel\'nikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences (Saratov Branch) D.V. Nefedov - Ph.D. (Eng.), Research Scientist, Kotel\'nikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences (Saratov Branch)
Nanoscale silicon field effect transistors for biosensors

N.V. Masalsky – Ph. D. (Phys-Math.), Leader Research Scientist, 

Federal scientific center, Research Institute for System Research of the RAS (Moscow)

E-mail: volkov@niisi.ras.ru

Improving the mechanical performance of silicon-carbon coatings by ion nitriding

A.S. Rudenkov – Ph.D (Eng.), Leading Research Scientist, 

Francisk Skorina Gomel State University (Republic of Belarus)

A.V. Rogachev – Dr.Sc. (Chem.), Professor, Head of Department, 

Francisk Skorina Gomel State University (Republic of Belarus)

S.M. Zavadski – Ph.D (Eng.), Head of Department, 

Belarusian State University of Informatics and Radioelectronics (Minsk, Republic of Belarus)

D.A. Golosov – Ph.D. (Eng.), Leading Research Scientist, 

Belarusian State University of Informatics and Radioelectronics (Minsk, Republic of Belarus)

P.A. Lychnikov – Research Scientist, MIREA ‒ Russian Technological University (Moscow)

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS" 

E-mail: volkov@niisi.ras.ru

Nanoelectronic biosensors for oncological diseases diagnostics

T.S. Romanova – Ph.D. (Biol.), Junior Research Scientist, Institute of Biomedical Chemistry (Moscow)

E-mail: romtatyana@mail.ru

K.A. Malsagova – Ph.D. (Biol.), Junior Research Scientist, Institute of Biomedical Chemistry (Moscow)

E-mail: f17-1086@yandex.ru

T.O. Pleshakova – Dr Sc. (Biol.), Deputy Director of Research, Institute of Biomedical Chemistry (Moscow) 

E-mail: pleshakova@gmail.com

A.A. Valueva – Junior Research Scientist, Institute of Biomedical Chemistry (Moscow);  D. Mendeleev University of Chemical Technology of Russia (Moscow)

E-mail: varuevavarueva@gmail.com

R.A. Galiullin – Lead Programmer, Institute of Biomedical Chemistry (Moscow)

E-mail: rafael.anvarovich@gmail.com

V.S. Ziborov – Leading Specialist, Institute of Biomedical Chemistry (Moscow);  Joint Institute for High Temperatures of the RAS (Moscow) 

E-mail: ziborov.vs@yandex.ru

O.F. Petrov – Academician of the RAS, Dr.Sc. (Phys.-Math.), Director of the Institute, 

Joint Institute for High Temperatures of the RAS (Moscow)

E-mail: ofpetrov@ihed.ras.ru

V.G. Nikitaev – Dr.Sc. (Eng.), Professor, Head of the Department of computer medical system,  National Research Nuclear University «MEPhI» (Moscow)

E-mail: kaf46@mail.ru

A.N. Pronichev – Ph.D. (Eng.), First Deputy Head of the Department of Computer Medical Systems,  National Research Nuclear University «MEPhI» (Moscow)

E-mail: kaf46@mail.ru

E.A. Druzhinina – Post-graduate Student, National Research Nuclear University «MEPhI» (Moscow)

E-mail: kaf46@mail.ru

Yu.D. Ivanov – Dr.Sc. (Biol.), Professor, Head of the Nanobiotechnology Laboratory, 

Institute of Biomedical Chemistry (Moscow)

E-mail: yurii.ivanov.nata@gmail.com

Physico-technological principles of construction and operation of high-performance information systems

S.S. Antsyferov – Dr.Sc., (Eng.), Professor, 

Metrology and Standardization Department, MIREA – Russian Technological University (Mocsow)

E-mail: c_standard@fel.mirea.ru

K.N. Fazilova – Assistant, Lecturer,

Metrology and Standardization Department, MIREA – Russian Technological University (Moscow)

E-mail: fazilova@mirea.ru

D.S. Trofimov – General Director, NPP «Toriy» (Moscow)

Investigation of localized states in barrier structures of electronic elements based on amorphous hydrogenized silicon

S.P. Vikhrov – Dr. Sc. (Phys.-Math.), Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: vikhrovsergey@mail.ru

N.V. Vishnyakov – Ph. D. (Eng.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: rcpm-rgrtu@yandex.ru

V.V. Gudzev – Ph. D. (Phys.-Math.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: valerygudzev@yandex.ru

V.G. Litvinov – Ph. D. (Phys.-Math.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: vglit@yandex.ru

V.G. Mishustin – Ph. D. (Phys.-Math.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: vgmish@yandex.ru

Preparation of the substrate surface of silicon nanowire field-effect transistors to create a biosensor

A.A. Cheremiskina¹, V.M. Generalov², A.S. Safatov³, G.A. Buryak4, A.L. Aseev5

1–4 Federal State Research Institution State Research Center of Virology and Biotechnology «Vector» Rospotrebnadzor     (Koltsovo, Novosibirsk Region, Russia)

5 Institute of Semiconductor Physics named after A.V. Rzhanov, Siberian Branch of the Russian Academy of Sciences

Novosibirsk State University (Novosibirsk, Russia)

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS" 

E-mail: volkov@niisi.ras.ru

Mathematical model of the pressure distribution on silicon wafers during two-sided polishing

I.I. Danilov1, N.G. Nazarov2, D.D. Dmitriev3, S.N. Sinavchian4, V.S. Sinavchian5

1–5 Bauman Moscow State Technical University (Moscow, Russia)

Sensory properties of fin surrounding gate nanotransistors

N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

Analysis of tendencies in the development of chip-resistor, microwave attenuators

S.V. Chizhikov – Master Student, Bauman Moscow State Technical University E-mail: chigikov95@mail.ru

Investigation of coaxial matched loads, based on multiphysical models in 0...50 GHz range

B.M. Kats – Ph.D.(Eng.), Senior Research Scientist, Head of Department, NIKA-Microwave, Ltd (Saratov) E-mail: brs19520@yandex.ru

V.P. Meschanov – Honored Scientist of RF, Dr.Sc.(Eng.), Professor, Director of NIKA-Microwave, Ltd (Saratov) E-mail: nika373@bk.ru

N.F. Popova – Ph.D.(Eng.), Senior Research Scientist, Head of Department, NIKA-Microwave, Ltd (Saratov) Ya.V. Turkin – Senior Research Scientist, NIKA-Microwave, Ltd (Saratov) E-mail: turkin.yaroslav@gmail.com

Influence of localized states on the effective height of metal – amorphous hydrogenated silicon potential barrier

N.V. Vishnyakov – Ph.D.(Eng.), Associate Professor, 

Department «Micro- and nanoelectronics», Ryazan State Radio Engineering University named after V.F. Utkin E-mail: rcpm-rgrtu@yandex.ru; rcpm@rsreu.ru

Technological aspects of the manufacture of MMIC

А.G. Gudkov1, V.N. Vyuginov2, V.V. Popov3, Yu.V. Solov’ev4, N.К. Travin5, S.V. Chizhikov6,
R.V. Agandeev7, V.D. Sсhashurin8

1,6–8 Bauman Moscow State Technical University (Moscow, Russia)

2 Electronic Instrumentation at V.I. Ulyanov (Lenin) SPbGETU «LETI» (St. Petersburg, Russia)

3 PJSC «Svetlana» (St. Petersburg, Russia)

4,5 JSC «Svetlana-Electronpribor» (St. Petersburg, Russia)

Mathematical model of double-sided polishing of a group of simultaneously processed silicon wafers

I.I. Danilov1, N.G. Nazarov2, D.D. Dmitriev3, S.N. Sinavchian4, V.S. Sinavchian5

1–5 Bauman Moscow State Technical University (Moscow, Russia)

Vertical CMOS nanotransistors with a conical channel for three-dimensional integrated circuits

Н.В. Masalsky1

1 Federal State Institution "Scientific Research Institute for System Analysis of RAS" (Moscow, Russia)

Sensory properties of a complementary pair of silicon field-effect nanotransistors with cylindrical geometry

N.V Masalsky1

1 Federal State Institution “Scientific Research Institute for System Analysis of the Russian Academy of Sciences” (Moscow, Russia)

Laser corner cube reflector for Russian lunar landing stations

O.A. Ivlev1, V.K. Milyukov2, I.A. Grechukhin3, D.A. Pavlov4, V.V. Azarov5, Y.A. Kotlov6, I.O. Ivlev7, V.K. Sysoev8

1,3,5,6,7 JSC "Precision Systems and Instruments" (Moscow, Russia)

2 Sternberg Astronomical Institute of Lomonosov Moscow State University (Moscow, Russia)

4 Saint Petersburg State Univercity (Saint-Petersburg, Russia)

8 Lavochkin Science and Production Association (Moscow, Russia)

Integral-optical triming delay line for application in fiber optical communication lines

A.A. Nikitin1, V.V. Vitko2, A.A. Emelyanov3, A.B. Ustinov4

1–4 Saint-Petersburg State Electrotechnical University (LETI) (Saint Petersburg, Russia)

3 JSC «KNIRTI» (Zhukov of Kaluga Region, Russia)

1aanikitin@etu.ru, 2vitaliy.vitko@gmail.com, 3eaa15@knirti.ru, 4Ustinov_rus@yahoo.com

Energy-technological quantum parameters of silicon in electronics

L.V. Lysenko1, D.M. Akhmelkin2, V.K. Shatalov3, A.K. Gorbunov4

1, 2 JSC "Experimental Design Bureau of Microelectronics" (Kaluga, Russia)
3, 4 Kaluga branch of Bauman Moscow State Technical University
(National Research University) (Kaluga, Russia)
1–4 vkshatalov@yandex.ru

Template models of silicon carbide JFETs and their practical applications in high-temperature analog chip design problems in LTspice environment

V.E. Chumakov1, A.M. Pilipenko2, D.V. Kleimenkin3, V.N. Biryukov4

1,3 Don State Technical University (Rostov-on-Don, Russia)

2,4 Southern Federal University (Taganrog, Russia)

1 chumakov.dssa@mail.ru; 2 pilipenko-am@mail.ru; 3 K-Dima-01@mail.ru; 4 vnbiryukov@yandex.ru