P.S. Kuznetsov1, A.O. Sinelnikov2, E.J. Gutierrez Benavides3

1 JSC «GOSNIIP» (Moscow, Russia)
2, 3 Patrice Lumumba Peoples' Friendship University of Russia (Moscow, Russia)
 1 ps_kuznetsov@mail.ru, 2 sinelnikov-ao@rudn.ru, 3 estebangutierrezrusia@gmail.com

Silicon, traditionally used in semiconductor electronics, is a key element in the development of sensitive components for onboard equipment of spacecraft. However, the lack of clear standards regarding its mechanical properties creates challenges in three-dimensional mathematical modeling and the design of microsystems. In this context, it becomes necessary to investigate methods for measuring the elastic modulus of silicon, which will improve the accuracy and reliability of micromechanical sensors. Additionally, it is essential to consider the micro-sizes of elastic elements that perform the corresponding displacements.

Objective – to analyze methods for measuring the mechanical properties of silicon to enhance the design efficiency and reliability of micromechanical systems used in spacecraft.

The study of contemporary methods for measuring the mechanical properties of silicon used in micromechanical sensors for spacecraft revealed that the choice of measurement method directly affects the accuracy and reliability of the data necessary for designing high-quality microsystems. Static methods, despite their simplicity and accessibility, may not always provide the required accuracy under changing loads and temperatures. Dynamic methods, including resonance and impulse approaches, demonstrate higher sensitivity and may be preferable for complex applications in space.

However, no single method is universal, and their selection should be based on the specific requirements of the project and operating conditions. It is also important to consider the impact of mechanical properties on the durability and stability of micromechanical sensors under extreme conditions of outer space.

Kuznetsov P.S., Sinelnikov A.O., Gutierrez Benavides E.J. The analysis of measuring methods the mechanical properties of silicon in space electronics. Nanotechnology: development and applications – XXI century. 2025. V. 17. № 1. P. 45–55. DOI: https://doi.org/ 10.18127/ j22250980-202501-05 (in Russian)

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