L.V. Lysenko1, D.M. Akhmelkin2, V.K. Shatalov3, A.K. Gorbunov4

1, 2 JSC "Experimental Design Bureau of Microelectronics" (Kaluga, Russia)
3, 4 Kaluga branch of Bauman Moscow State Technical University
(National Research University) (Kaluga, Russia)
1–4 vkshatalov@yandex.ru

Theoretical and experimental material on silicon is presented, which, together with formal and experimental dependencies of energy technological processes, determines the parameters of integrated electronic circuits. It is shown that the fundamentals of quantum physics, the fine structure constants of electricity and magnetism, together with theoretical and experimental data on energy technology processes, make it possible to consider patterns for electronic structural materials. The relationships between Planck's constant, gravitational constant, speed of light, electrical constant, dielectric constant, electrical charges and mass for the element silicon are considered. Methodological issues of formalizing the parameters of energy technological processes, which determine the fine structure constant of silicon, are noted.

Lysenko L.V., Akhmelkin D.M., Shatalov V.K., Gorbunov A.K. Energy-technological quantum parameters of silicon in electronics. Science Intensive Technologies. 2024. V. 25. № 5. P. 16−23. DOI: https://doi.org/ 10.18127/j19998465-202405-02 (in Russian)

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