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Journal Electromagnetic Waves and Electronic Systems №4 for 2014 г.
Article in number:
The optimization of the mechanical surface processing technology of SiC wafers
Keywords: silicon Carbide (SiC) wafers double side lapping double side polishing surface roughness
Authors:
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
V. N. Vyuginov - Ph.D. (Eng.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: mail@svetlana-ep.ru
N. K. Travin - Leading Engineer, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail: travin@svetlana-ep.ru
Abstract:
The analysis of the market was performed, and the equipment for double side lapping and polishing of 3-inch semi-insulating 6H-SiC wafers was selected. To optimize the double side lapping, the following parameters were determined: the rotation speed and the upper plate pressure. Besides, we have replaced the single component slurry on the basis of boron carbide, recommended by the manufacturer of the equipment, with the multi-component slurry. It helped to reduce the lapping time, as well as to improve the quality of the lapping surface. During the double side polishing process optimization, the surface roughness Ra less than 2 nanometers was obtained.
Pages: 21-23
References

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