S.P. Vikhrov – Dr. Sc. (Phys.-Math.), Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: vikhrovsergey@mail.ru

N.V. Vishnyakov – Ph. D. (Eng.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: rcpm-rgrtu@yandex.ru

V.V. Gudzev – Ph. D. (Phys.-Math.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: valerygudzev@yandex.ru

V.G. Litvinov – Ph. D. (Phys.-Math.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: vglit@yandex.ru

V.G. Mishustin – Ph. D. (Phys.-Math.), Associate Professor, Department «Micro- and Nanoelectronics», Ryazan State Radio Engineering University

E-mail: vgmish@yandex.ru

Possibilities of current deep level transient spectroscopy and method of current compensation of non-stationary photoconductivity for the investigation of localized states in mobility gap of amorphous hydrogenizes silicon are reviewed. The possibility of their combined use as express method for parameters control of device structures based on non-crystalline semiconductors is shown.

1. W. van Sark, Korte L., Roca F. (eds.). Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Springer Berlin Heidelberg. Berlin: Heidelberg. 2012.
2. Mishustin V.G., Vikhrov S.P., Vishnyakov N.V., etc. Influence of the localized states on the collection efficiency of photogenerated charge carries in solar cells based on a-Si:H // Proceedings Research monograph MECO. Bar, Montenegro. 2016. P. 47−50.
3. Litvinov V.G., Vishnyakov N.V., Mishustin V.G. i dr. Issledovanie glubokix e’nergeticheskix urovnej v HIT-strukture a-Si:H(p)/a-Si:H(i)/cSi(n) // Sb. tr. Mezhd. konf. «Amorfny’e i mikrokristallicheskie poluprovodniki». SPb.: Izd-vo Politexnicheskogo un-ta. 2016. S. 211−212.
4. Strit R., Bigel’sen D. Spektroskopiya lokalizovanny’x sostoyanij // Fizika gidrogenizirovannogo kremniya. Vy’p. II. E’lektronny’e i kolebatel’ny’e svojstva / Pod red. Dzhounopulosa Dzh., Lyukovski Dzh. M.: Mir. 1988. 448 s.
5. Vishnyakov N.V., Gudzev V.V., Litvinov V.G., Mishustin V.G. Issledovanie glubokix urovnej v bar’erny’x strukturax na osnove amorfnogo gidrogenizirovannogo kremniya // Sb. tr. STNO-2016. Ryazan’: RGRTU. 2016. S. 259−263.
6. Avachev A.P., Almazov D.V., Mal’chenko S.I., Mishustin V.G. Modificzirovanny’j vremyaproletny’j metod: perspektivy’ razvitiya // Vestnik Ryazanskogo gosudarstvennogo radiotexnicheskogo universiteta. 2012. № 42−2. S. 39−43.
7. Oreshkin P.T. Fizika poluprovodnikov i die’lektrikov: Ucheb. posobie. M.: Vy’sshaya shkola. 1977. 448 s.
8. Gudzev V.V., Zubkov M.V., Kusakin D.S., Litvinov V.G. Sposob opredeleniya e’nergii ionizaczii ravnomerno raspredelenny’x defektov s glubokimi urovnyami v poluprovodnikovy’x bar’erny’x strukturax s neodnorodny’m legirovaniem bazy’ // Vestnik Ryazanskogo gosudarstvennogo radiotexnicheskogo universiteta. 2015. № 52. S. 163−168.
9. Alpatov A.V., Kostryukov S.A., Mishustin V.G. i dr. Issledovanie kontaktny’x yavlenij v fotoe’lektricheskix datchikax na osnove nanostrukturirovanny’x neuporyadochenny’x poluprovodnikov // Vestnik Ryazanskogo gosudarstvennogo radiotexnicheskogo universiteta. 2009. № 30. S. 58−62.
10. Litvinov V.G., Vishnyakov N.V., Gudzev V.V., Mishustin V.G., Vikhrov S.P., Karabanov S.M., Karabanov A.S. Measuring complex for analysis of recombination deep traps in semiconductor solar cells // USB Proceedings 2015 IEEE ICIT. Seville, Spain. 17−19 March 2015. P. 1071−1074.
11. Mishustin V.G. Novy’j podxod k issledovaniyu neuporyadochenny’x poluprovodnikov modificzirovanny’m vremyaproletny’m metodom // Vestnik Ryazanskogo gosudarstvennogo radiotexnicheskogo universiteta. 2001. № 8. S. 95−99.