350 rub
Journal Science Intensive Technologies №11 for 2013 г.
Article in number:
Relevant Characteristics of Epitaxial Growth Technology of Microwave and RF PIN-Diodes at JSC «Optron» and its Perspectives
Keywords: epitaxy PIN diode silicon microwave device semiconductor structures
Authors:
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
T.P. Kolmakova - Ph.D. (Eng.), Production Site Manager, JSC «Optron»
M.V. Mezhennyi - Assistant of Production Site Manager, JSC «Optron»
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Abstract:
To summarize the presented review we note that Optron technology is, on the one hand, unified, and on the other hand - unique. The requirement to produce electronic devices at Optron is related to impossibility and unviability of purchasing them abroad for reasons of defense, technological and economic security. Having solved existing technical problems, modernized production equipment and developed processing line for semiconductor device production, Optron will be able to remain a leader in manufacturing and development of microwave and HF devices.
Pages: 22-29
References

 

  1. Whitman L.J., Joyce S.A., Yarmoff J.A., McFcely F.R. Terminello L.J. The chemosorphous of SiCl4, Si2Cl6 and chlorine on Si (111) 7×7 // Semicond. Sci. Technol. 1989. V. 4. P. 1056-1057.
  2. Stephen C.S. Low-temperature Silicon Processing Techniques fos VISIC- Fabrication // Solid State Technol. 1981. № 3. P. 72-82.
  3. Lyer S.S., Arienzo M., de Fresant E. Low-temperature Silicon Cleaning via Hydrogen passivation and conditions for Epitaxy // Appl. Phys. Lett. 1990. V. 57. № 9. P. 893-895.
  4. Burns G.P. Low-temperature native oxide removal from Silicon using nitrogen trifluoride prior low-temperature Epitaxy // Appl. Phys. Lett. 1988. V. 53. № 10. P. 1423-1425.
  5. Orion B.V., Skvorczov I.M. Voprosy' nizkotemperaturnogo vy'rashhivaniya e'pitaksial'ny'x sloev kremniya // Proczessy' rosta i sinteza poluprovodnikovy'x kristallov i plenok: Ch. 1. Novosibirsk: Nauka. 1975. S. 132-138.
  6. Rajnova Ju.P., Chistyakov Ju.D. Fiziko-ximicheskie osnovy' texnologii mikroe'lektroniki. M.: Metallurgiya. 1979. 408 c.
  7. Akulenok M.V. E'pitaksial'ny'e proczessy' v texnologii mikroe'lektroniki. M.: MIE'T. 1993. 84 c.
  8. Proczessy' real'nogo kristalloobrazovaniya / Pod red. N. V. Belova. M.: Nauka. 1977. 235 c.
  9. Florenczev S.N. Silovaya e'lektronika nachala ty'syacheletiya // E'lektrotexnika. 2003. № 6. S. 3-9.