Journals
Books
Articles by keyword epitaxy
About formation of macroscopical ledges on prismatic surface of silicon a wire
V.A. Nebol-sin, A.I. Dunaev, A.A. Dolgachev, M.A. Zavalishin
Relevant Characteristics of Epitaxial Growth Technology of Microwave and RF PIN-Diodes at JSC «Optron» and its Perspectives
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
T.P. Kolmakova - Ph.D. (Eng.), Production Site Manager, JSC «Optron»
M.V. Mezhennyi - Assistant of Production Site Manager, JSC «Optron»
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Perspective technology of fabrication of high-voltage p-i-n GaAs-AlGaAs structures for power electronics
V.L. Krukov - Ph.D.(Eng.), JSC «Mega Epiteсh» (Kaluga). E-mail: vitk3@mail.ru E.V. Krukov -Engenir, JSC «Mega Epiteсh» (Kaluga)
L.A. Meerovich - General Director, EAO «ELMAT» (Kaluga). E-mail: lameerovich@gmail.com
S.S. Strelchenko - JSC «Mega Epiteсh» (Kaluga)
S.S. Strelchenko - Dr.Sc. (Eng.), Professor, Bauman Moscow State Technical University, Kaluga Branch. E-mail: stas40@kaluga.ru
K.A. Titivkin - Engineer, JSC «Mega Epiteсh» (Kaluga)
Perspective technology of fabrication of high-voltage p-i-n GaAs-AlGaAs structures for power electronics
V.L. Krukov - Ph.D.(Eng.), JSC «Mega Epiteсh» (Kaluga). E-mail: vitk3@mail.ru E.V. Krukov -Engenir, JSC «Mega Epiteсh» (Kaluga)
L.A. Meerovich - General Director, EAO «ELMAT» (Kaluga). E-mail: lameerovich@gmail.com
S.S. Strelchenko - JSC «Mega Epiteсh» (Kaluga)
S.S. Strelchenko - Dr.Sc. (Eng.), Professor, Bauman Moscow State Technical University, Kaluga Branch. E-mail: stas40@kaluga.ru
K.A. Titivkin - Engineer, JSC «Mega Epiteсh» (Kaluga)
Epitaxial growth of GaAs on NiSb
S.A. Aitkhozhin - Ph.D. (Phys.-Math.), Senior Researcher, Kotelnikov IRE RAS (Fryazino Branch) A.S. Artemov - Dr.Sc. (Phys.-Math.), Professor, Kotelnikov IRE RAS (Fryazino Branch) P.S. Belousov - Ph.D. (Chem.), Kotelnikov IRE RAS (Fryazino Branch) M.A. Bobilev - Junior Researcher, Kotelnikov IRE RAS (Fryazino Branch) E.V. Kaevitser - Ph.D. (Phys.-Math.), Senior Researcher, Kotelnikov IRE RAS (Fryazino Branch) V.E. Lyubchenko - Dr.Sc. (Phys.-Math.), Professor, Head of Laboratory, Kotelnikov IRE RAS (Fryazino Branch) K.P. Petrov - Ph.D. (Eng.), Kotelnikov IRE RAS (Fryazino Branch) Yu.Sh. Temirov - Ph.D. (Phys.-Math.), Kotelnikov IRE RAS (Fryazino Branch) S.B. Farafonov - Ph.D. (Eng.), Kotelnikov IRE RAS (Fryazino Branch)
Epitaxial growth of GaAs on NiSb
S.A. Aitkhozhin - Ph.D. (Phys.-Math.), Senior Researcher, Kotelnikov IRE RAS (Fryazino Branch) A.S. Artemov - Dr.Sc. (Phys.-Math.), Professor, Kotelnikov IRE RAS (Fryazino Branch) P.S. Belousov - Ph.D. (Chem.), Kotelnikov IRE RAS (Fryazino Branch) M.A. Bobilev - Junior Researcher, Kotelnikov IRE RAS (Fryazino Branch) E.V. Kaevitser - Ph.D. (Phys.-Math.), Senior Researcher, Kotelnikov IRE RAS (Fryazino Branch) V.E. Lyubchenko - Dr.Sc. (Phys.-Math.), Professor, Head of Laboratory, Kotelnikov IRE RAS (Fryazino Branch) K.P. Petrov - Ph.D. (Eng.), Kotelnikov IRE RAS (Fryazino Branch) Yu.Sh. Temirov - Ph.D. (Phys.-Math.), Kotelnikov IRE RAS (Fryazino Branch) S.B. Farafonov - Ph.D. (Eng.), Kotelnikov IRE RAS (Fryazino Branch)
The peculiarities of InGaAsP/InP nanoheterostructures technology for laser radiation receivers at 1064 nm wave length
A.E. Marichev - Post-graduate of the Optoelectronic Chair St-P.GETU «LETI»; Laboratory Assistant, Ioffe Institute. E-mail: segregate1@yandex.ru R.V. Levin - Senior Research Scientist, Ioffe Institute. E-mail: lev13@yandex.ru A.B. Gordeeva - Ph.D. (Phys.-Math.), Senior Research Scientist, Ioffe Institute. E-mail: anasta-siya.gordeeva@mail.ioffe.ru G.S. Gagis - Ph.D. (Phys.-Math.), Senior Research Scientist, Ioffe Institute. E-mail: galina.gagis@gmail.com V.I. Kuchinskii - Dr.Sc. (Phys-Math), Professor, Main Research Scientist, Ioffe Institute, Head of the Optoelectronic Chair St-P.GETU «LETI». E-mail: HHvladimir@kuchU.UioffeU.UruH N.D. Prasolov - Engineer Ioffe Institute, Post-graduate, St-P. National Research University of information Technology, Mechanic and Optic (ITMO). E-mail:nikpras@bk.ru N.M. Shmidt - Dr.Sc. (Phys-Math), Professor, Main Research Scientist, Ioffe Institute, Teacher of the Optoelectronic Chair St-P.GETU «LETI». E-mail: HHnataliaU.Ushmidt@mailU.UioffeU.Uru
The properties of nanoscale transition layer on the insulator-semiconductor interface in the MIS structures based on MBE n(p)-Hg<sub>1-x</sub>Cd<sub>x</sub>Te (x = 0.21-0.23) with near-surface graded-gap layers and without such layers
A.V. Voitsekhovskii - Dr.Sc. (Phys.-Math.), Head of Department, National Research Tomsk State University E-mail: vav43@mail.tsu.ru N.A. Kulchitsky - Dr.Sc. (Eng.), Professor, Moscow Technological University (MIREA), Lomonosov Moscow State University E-mail: n.kulchitsky@gmail.com S.N. Nesmelov - Ph.D. (Phys.-Math.), Senior Research Scientist, National Research Tomsk State University E-mail: nesm69@mail.ru S.M. Dzyadukh - Ph.D. (Phys.-Math.), Research Scientist, National Research Tomsk State University E-mail: bonespirit@sibmail.com
Production of thin graphite films on a dielectric substrate by heteroepitaxial synthesis

I.A. Sorokin, D.V. Kolodko, E.G. Shustin, V.A. Luzanov

Fryazino branch of Kotelnikov Institute of Radioengineering and Electronics of RAS (Fryazino, Russia)

Production of thin graphite films on a dielectric substrate by heteroepitaxial synthesis

I.A. Sorokin1, D.V. Kolodko2, E.G. Shustin3, V.A. Luzanov4

1-4 Fryazino branch of Kotelnikov Institute of Radioengineering and Electronics of RAS (Fryazino, Russia)