I.A. Sorokin1, D.V. Kolodko2, E.G. Shustin3, V.A. Luzanov4

1-4 Fryazino branch of Kotelnikov Institute of Radioengineering and Electronics of RAS (Fryazino, Russia)

Problem statement. Development of methods for producing large-area isolated graphene under controlled conditions is an important task, which is primarily interested in the unique physical and chemical properties of graphene: high electrical and thermal conductivity, dependence of electronic characteristics on the presence of attached different radicals on the graphene surface, adjustable band gap, and high carrier mobility.

Goal. It is necessary to develop regimes for producing thin graphite films on a dielectric substrate by annealing the structure (0001)Al2O3/(111)Ni/ta-C with a minimum density of defects in the crystal structure by the heteroepitaxial synthesis method.

Results. The method of obtaining thin graphite films on a dielectric substrate by annealing the structure (0001)Al2O3/(111)Ni/ta-C has been tested. The method is based on the catalytic decomposition of hydrocarbons on the single crystal surface of a metal catalyst, diffusion and crystallization of carbon on the reverse side of the metal film. The surface of the obtained carbon films with a thickness significantly exceeding one atomic layer is uniform within the 5x5 mm samples. Varying the annealing temperature and time, as well as the initial amount of carbon, will further allow to control the amount of carbon involved in the formation of atomic layers.

Practical significance. The described method is promising for developing a scalable technological process for obtaining large-area graphene on a dielectric substrate.

Sorokin I.A., Kolodko D.V., Shustin E.G., Luzanov V.A. Production of thin graphite films on a dielectric substrate by heteroepitaxial synthesis. Nonlinear World. 202 1. V. 19. № 2. 2021. P. 43-47. DOI: https://doi.org/10.18127/j20700970-202102-10 (In Russian)

1. Wu Y., Jenkins K.A., Valdes-Garcia A., Farmer D.B., Zhu Y., Bol A.A., et al. State-of-the-art graphene high-frequency electronics. Nano Letters 2012; 12 (6): 3062−3067.
2. Bonaccorso F., Lombardo A., Hasan T., Sun Z., Colombo L., Ferrari A.C. Production and processing of graphene and 2d crystals. Materials Today 2012; 15 (12): 564–589.
3. Randviir E.P., Brownson D.A.C., Banks C.E. A decade of graphene research: Production, applications and outlook. Materials Today 2014; 17 (9): 426-432.
4. Peng Z., Yan Z., Sun Z., Tour J.M. Direct growth of Bilayer graphene on SiO2 substrates by carbon diffusion through nickel. ACS Nano 2011; 5 (10): 8241-8247.
5. Zheng M., Takei K., Hsia B., Fang H., Zhang X., Ferralis N., et al. Metal-catalyzed crystallization of amorphous carbon to graphene. Applied Physics Letters 2010; 96 (6): 063110.
6. Xu M., Fujita D., Sagisaka K., Watanabe E., Hanagata N. Production of extended single-layer graphene. ACS Nano 2011; 5 (2): 1522-1528.
7. Sun Z., Yan Z., Yao J., Beitler E., Zhu Y., Tour J.M. Growth of graphene from solid carbon sources. Nature 2011; 471 (7336): 124.
8. Luzanov V.A., Kotelyanskii I.M., Shustin E.G. Single-domain nickel films for production of graphene. Journal of Communications Technology and Electronics 2017; 62 (7): 820-821.
9. Ismach A., Chou H., Ferrer D.A., Wu Y., McDonnell S., Floresca H.C., et al. Toward the controlled synthesis of hexagonal boron nitride films. ACS Nano 2012; 6 (7): 6378-6385.
10. Baraton L., He Z.B., Lee C.S., Cojocaru C.S., Chtelet M., Maurice J.-L., et al. On the mechanisms of precipitation of graphene on nickel thin films. EPL 2011; 96 (4): 46003.
11. Sorokin I.A., Kolodko D.V., Shustin E.G. Synthesis of nano-crystalline graphite films in hollow cathode discharge. Technical Physics 2018; 63 (8): 1157-1159.
12. Lahiri J., Miller T.S., Ross A.J., Adamska L., Oleynik I.I., Batzill M. Graphene growth and stability at nickel surfaces. New Journal of Physics 2011; 13: 025001.
13. Fomin L.A., Malikov I.V., Vinnichenko V.Y., Kalach K.M., Pyatkin S.V., Mikhailov G.M. Investigating the surface morphology and magnetic contrast of epitaxial ferromagnetic structures. Journal of Surface Investigation 2008; 2 (1): 104-109.