V.L. Krukov - Ph.D.(Eng.), JSC «Mega Epiteсh» (Kaluga). E-mail: vitk3@mail.ru E.V. Krukov -Engenir, JSC «Mega Epiteсh» (Kaluga)
L.A. Meerovich - General Director, EAO «ELMAT» (Kaluga). E-mail: lameerovich@gmail.com
S.S. Strelchenko - JSC «Mega Epiteсh» (Kaluga)
S.S. Strelchenko - Dr.Sc. (Eng.), Professor, Bauman Moscow State Technical University, Kaluga Branch. E-mail: stas40@kaluga.ru
K.A. Titivkin - Engineer, JSC «Mega Epiteсh» (Kaluga)

Intensive introduction around the world energy saving technologies shows more and more rigid requirements to devices of power electronics, to execute which, using traditional component base, not possible. The basic material of modern electronics - silicon - for a number of applications already exhausted the opportunities. Existence of non-optimal process of reverse recovery causes switching losses which lead to significant increase in the power disseminated by the device at high frequencies in silicon diodes. Therefore for high-frequency applications materials with wider band gap, such as SiC and GaAs, appear more effective. GaAs p-i-n diodes possess high dynamics, thermostability, in high order more effective at high-frequency in comparison with silicon diodes and several times in comparison with SiC diodes, at the cost close to silicon diodes. Important advantage of p-i-n of diodes on the basis of GaAs unlike Schottky's diodes on the basis of SiC is possibility of direct replacement of silicon diodes without change of the existing circuitry decision. Gallium arsenide as a material of power electronics didn't receive attention of developers owing to absence a long time of a reliable industrial method of receiving the high-resistance epitaxial material. In article the original technology of fabrication of high-resistance p-i-n structures based of GaAs-AlGaAs system is considered by a method of a liquid-phase epitaxy which allows to receive the power diodes significantly surpassing in set of key parameters the best silicon analogs. Feature of this technology is the ability to effectively manage key parameters of p-i-n structures (reverse voltage, speed, «softness» of the process of reverse recovery, temperature dependence of VAC) by set the required process conditions. Use of the high-performance growth graphite device of flowing type allowed to produce the ready multilayered semiconductor heterostructure of GaAs-AlGaAs containing both poorly doping layer, and strongly doping contact layers within one epitaxial process.