V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg

In this article, the results of the temperature effects of the semi-insulating SiC wafer electrical resistivity are presented. The experiments were performed on 6H-SiC 3-inch SiC wafers. The wafers were annealed at the temperature of 1050oC within 2 min in Ar atmosphere at 760 torr pressure. The analysis of the wafers electrical resistivity before annealing, just after annealing, and in a week after annealing showed, that the annealing in inert-gas atmosphere improves the uniformity of the electrical resistivity of the wafers and reduces mechanical stresses. After the annealing this effect remains unchanged at normal conditions.