350 rub
Journal №2 for 2013 г.
Article in number:
Formation and structure of nanosized layer of silicon carbide on silicon by implantation of high doses of carbon ions
Keywords: carbon ions silicon silicon carbide implantation X-ray reflectometry surface composition
Authors:
I.K. Beysembetov, K.Kh. Nusupov, N.B. Beysenkhanov, S.K.Zharikov, B.K. Kenzhaliev, T.K. Akhmetov
Abstract:
It is studied a variation of surface composition of single crystal silicon at high-dose carbon implantation with silicon carbide structure formation in the near surface layer. The - SiC film - Si substrate - transition region is thinned. The composition, density, and thickness of the nanosized SiC0,7 and SiC films obtained was measured by X-ray reflectometry method. In the presence of a sharp boundary in the transition region the oscillations of the X-ray reflections intensity are observed. Nanosized SiO2 and SiC layers are identified by using Henke program. The data found correlate with experimental results obtained by the Auger spectroscopy, IR spectroscopy, and atomic force microscopy methods. The influence of implantation induced sputtering and surface composition variation on C atoms distribution in Si is also considered.
Pages: 36-42
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