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Journal Science Intensive Technologies №11 for 2013 г.
Article in number:
The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes
Keywords: radiation processing accelerated electron PIN structure silicon volt-ampere characteristic Schottky barrier ion implantation doping radiation-enhanced diffusion
Authors:
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
A.S. Drenin - Senior Engineer of Design Department, JSC «Optron». E-mail: dasnew@mail.ru
P.B. Lagov - Ph.D. (Eng.), Associate Professor of the Chair for Semiconductor Electronics and Semiconductor Physics, MISiS. E-mail: lagov2000@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Abstract:
Radiation effects on major static and dynamic parameters microwave p-i-n diodes with varying thickness of i-layer while processing with fast electrons and low temperature annealing. A technology was developed to fabricate epitaxial mesa-structures of p-i-n diodes which provides direct and reverse volt-ampere characteristics and high-speed performance by processing diodes with electron irradiation. Based on this technology samples of microwave diodes in KT-46 package were fabricated that outperform their foreign counterpart - HSMP3820 diode in a set of electrical parameters. One of the insights was that in case of low-temperature activation with fast high-density electrons and drive-in diffusion of implanted boron in Si with simultaneous growth of dielectric film a p-type conductive region forms in n-type Si material which enables formation of p-n-junction after contact metallization. Using original low-temperature technique to form a buffer ring and a protective dielectric film in a fast electron flux after barrier contact formation, samples of Schottky diodes with flat reverse volt-ampere characteristics and extended temperature range were fabricated.
Pages: 51-56
References

 

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