Journals
Books
Articles by keyword Schottky barrier
Selectively-Sensitive Ultraviolet MSM-Photodetectors
S.V. Averin, P.I. Kuznetzov, V.F. Zhitov, N.V. Alkeev, V.M. Kotov, A.A. Dorofeev, N.B. Gladisheva
The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
A.S. Drenin - Senior Engineer of Design Department, JSC «Optron». E-mail: dasnew@mail.ru
P.B. Lagov - Ph.D. (Eng.), Associate Professor of the Chair for Semiconductor Electronics and Semiconductor Physics, MISiS. E-mail: lagov2000@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Application of Plasma-Chemical Etching for pin Diode Technology
O.R. Abdullaev - Pd. Sc. (Eng.), Director of Science and Production, JSC «Optron». E-mail: abd@optron.ru
E.S. Rogovskiy - Senior Engineer, JSC «Optron». E-mail: skb-optron@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Peculiar properties of terahertz frequency convertors design

S.A. Meschkov − Ph.D.(Eng.), Associate Professor, 

Bauman Moscow State Technical University

Е-mail: meschkow@bmstu.ru

N.V. Fedorkova − Ph.D.(Eng.), Associate Professor, 

Bauman Moscow State Technical University

Е-mail: nvf@bmstu.ru

Modernization of the quasi-monolithic microwave integrated circuit power ampifier

V.A. Iovdalskiy1, N.V. Ganiushkina2, V.P. Marin3, I.N. Ayupov4, P.A. Storin5

1,2,4,5 JSC «RPC “Istok” named after Shokin» (Moscow region, Fryazino, Russia)
3 MIREA – Russian Technological University (Moscow, Russia)