O.R. Abdullaev - Pd. Sc. (Eng.), Director of Science and Production, JSC «Optron». E-mail: abd@optron.ru
E.S. Rogovskiy - Senior Engineer, JSC «Optron». E-mail: skb-optron@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru

In this article results of high-density plasma-induced chemical etching of silicon with RIE reactor Plazmakom-203 for wafer thinning and mesa structure formation with following aluminosilicate glass covering are presented. A s a result process conditions for obtaining up to 400 μm high silicon mesastructures and up to 200 μm deep trenches at input aperture of 10-60 μm with sidewall angle of 8991 ° were found. The undercut profile was 0,23 μm, sidewall roughness - ca. 0,05 μm for (100) silicon and ca. 1 μm - for (111) silicon, average etch rate - 35 μm/min. (depending on the etch profile/orientation ratio of silicon), selectivity to the ФП-25 photoresist mask was about 60, selectivity to the aluminium mask - above 500. The mentioned processes can be used in PIN and Schottky diode and stabilitron process technology.