A.V. Skiper - Senior Lecturer, Kaluga branch of the Bauman MSTU. E-mail: skiper60@yandex.ru N.S. Lazarev - Student, Kaluga branch of the Bauman MSTU. E-mail: lazarevnikolay05@gmail.com V.S. Zaionchkovskiy - Ph. D. (Phys.-Math.), Associate Professor, Kaluga branch of the Bauman MSTU. E-mail: vz48@post.ru I.A. Rastorguyev - Student, Kaluga branch of the Bauman MSTU. E-mail: rastorguew94@gmail.com

Ohmic contact is one of the most common and important for electronic devices. This article discusses the system is an alternative to aluminum - Ti-Ni. The technological features of deposition of these metals. Shows current-voltage characteristics of the contacts after annealing at various temperatures. Current-voltage characteristics after isochronous photonic annealing at temperatures ranging from 450° C to 650° C have an unusual shape - of the two straight line sections with different slope to the voltage axis passing smoothly into one another. This can be explained by the fact that there is a formation of two silicon silicide phases (TiSi2), with different values of resistivity. The minimum value of resistivity data contacts occurs without any annealing or after annealing at 700° C.

 

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