350 rub
Journal Nonlinear World №2 for 2014 г.
Article in number:
Dependence of electroconductivity a-Si:H/c-Si structures on preliminary plasma treatment of single-crystalline silicon
Authors:
D.V. Nefedov - Ph.D. (Eng.), Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences. E-mail: nefedov_dv@rambler.ru
S.Y. Suzdaltsev - Ph.D. (Eng.), Senior Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
S.Y. Suzdaltsev - Ph.D. (Eng.), Senior Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
Abstract:
Influence of preliminary treatment of single-crystalline silicon in argon and chladone plasma on change of electroconductivity a-Si:H/c-Si are realized. Essential influence on electroconductivity does preliminary treatment of chladone plasma are established. The samples will use as substrates for field-emission diamond-graphite structures.
Pages: 74-75
References
- Turishhev S. Ju., Terexov V. A., Parinova E. V. i dr. / Izvestiya vuzov. Ser. Materialy' e'lektronnoj texniki. 2011. T. 2. S. 3 - 10.
- Ivanovskij G. F., Petrov V. I. Ionno-plazmennaya obrabotka materialov. M.: Radio i svyaz'. 1986. 232 s.