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Journal Radioengineering №1 for 2016 г.
Article in number:
Microwave monolitic integrated curcuit switche on the SiC pin diodes
Keywords: switch monolithic integrated circuit space applications functional characteristics SiC pin-diode a silicon carbide diode ionizing radiation the temperature drop
Authors:
V.N. Vyuginov - Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov - Dr. Sc. (Eng.), Professor, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com Yu.S. Kuzmichev - Head of Laboratory, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: dobrov@svetlana-ep.ru
Abstract:
The efficiency microwave monolitic integrated curcuits switches, working in the extreme conditions of the destabilizing factors (tem-perature changes and ionizing radiation), inherent to outer space, depends on performance improving, energy efficiency and reliability of solid-state element base, the ability of long-term operation in harsh environments. The great superiority of the main operational parametres of the switch on the SiC pin diodes for the dm- and sm-wavelength ranges, comparing with switch on the Si pin diodes are presented. The main element, defining durability of microwave monolitic integrated curcuits switches to the destabilizing factors is a nonlinear element - pin diode. The influence of the main destabilizing factors (temperature changes and ionizing radiation), inherent to outer space, on the Si pin diodes parameters are considered. Dependences of the main samples of the microwave monolitic integrated curcuits switches on the SiC pin diodes.
Pages: 110-112
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