А.G. Gudkov1, V.N. Vyuginov2, V.V. Popov3, Yu.V. Solov’ev4, N.К. Travin5, S.V. Chizhikov6,
R.V. Agandeev7, V.D. Sсhashurin8

1,6–8 Bauman Moscow State Technical University (Moscow, Russia)

2 Electronic Instrumentation at V.I. Ulyanov (Lenin) SPbGETU «LETI» (St. Petersburg, Russia)

3 PJSC «Svetlana» (St. Petersburg, Russia)

4,5 JSC «Svetlana-Electronpribor» (St. Petersburg, Russia)

The switch and low-noise amplifier based on field-effect transistors on heterostructures used in various receiver designs must be of high quality, therefore, it is necessary to conduct a study of the influence of the manufacturing error of microwave transistors for MIC on mechanical and electrical parameters.

The paper presents the results of an experimental study of the effect of temperature exposure on the resistivity of semi-insulating silicon carbide substrates. The optimization of the processes of double-sided grinding and polishing was also carried out, and it was experimentally revealed that the developed technology of cutting single crystals of semi-insulating silicon carbide meets all modern requirements for this process. The influence of cutting technology, mechanical processing on the mechanical parameters of the substrate of semi-insulating silicon carbide has been studied, and the effect of the annealing temperature of semi-insulating silicon carbide on its electrical resistivity has been studied.

Gudkov А.G., Vyuginov V.N., Popov V.V., Solov’ev Yu.V., Travin N.К., Chizhikov S.V., Agandeev R.V., Sсhashurin V.D. Technological aspects of the manufacture of MMIC. Achievements of modern radioelectronics. 2022. V. 76. № 8. P. 52–71. DOI: https://doi.org/ 10.18127/j20700784-202208-03 [in Russian]

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