Издательство РАДИОТЕХНИКА

V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Principal on innovative development, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Senior Specialist, GZ Pulsar. E-mail: kb-it@mail.ru
А.А. Makarov - Processing Engineer, GZ Pulsar. E-mail: makarov.pulsar@gmail.com
M.V. Pashkov - Processing Engineer, GZ Pulsar. E-mail: michaelpashkov@yandex.ru
R.I. Tychkin - Deputy Chief Engineer, GZ Pulsar

Semiconductor Light

V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru N.N. Solovyev - Ph.D. (Phys.-Math.), Associate Professor, MSTU MIREA A.A. Shchuka - D. Sc. (Eng.), Professor, MSTU MIREA. E-mail: shchuka@mail.mipt.ru

Perspective Application of Cubic Boron Nitride for Electronic Devices Fabrication

O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, Place of employment: JSC «Optron». E-mail: abd@optron.ru
A.S. Yakunin - Director of Department for RF Electronics Production, Сhamber of Commerce and Industry of the Russian Federation

Analysis of the Effect of Neutron Irradiation on the Size and Parameters of Optical Active Region and Current-Lumen-Voltage Characteristics of Quaternary AlGaInP and AlGaInN Heterostructures

O.R. Abdullaev - Ph. Sc. (Eng.), Director of Science and Production, JSC «Optron». E-mail: abd@optron.ru
L.V. Garshenin - Рh. Sc. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: gar@optron.ru
I.V. Rizhikov - Рh. Sc. (Eng.), Teaching Professor, MSUDI

Metastable spin transfer in layered heterosructures with adynamic supersymmetric state

L.E. Gurskij, G.V. Krylova

Spin splitting of two dimensional states in the conduction band of asymmetric heterostructures: contribution from the atomically sharp interface

Zh.A. Devizorova - Student MPTI. E-mail: DevizorovaZhanna@gmail.com
V.A. Volkov - Dr.Sc. (Phis.-Math.), Professor, Leading Researcher, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences

The current state and the prospects of microwave device development at JSC «Svetlana»

V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg

Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

Aspects of heteroepitaxial growth processes for solid-state lighting applications

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
А.Yu. Voloshin - Head SKB «FIR SE», JSC «GZ Pulsar». E-mail: anvo@yandex.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

Aspects of heteroepitaxial growth processes for solid-state lighting applications

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru А.Yu. Voloshin - Head SKB «FIR SE», JSC «GZ Pulsar». E-mail: anvo@yandex.ru N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

O.V. Losev and ways of development of Russian microelectronics in the 21st century

S.A. Gilyov - Leading Engineer, Museum of science «Nizhny Novgorod Radiolaboratory», Lobachevsky State University of Nizhny Novgorod (Nizhny Novgorod). E-mail: serangil-nrl@yandex.ru M.A. Novikov - Ph. D. (Phys.-Math.), Leading Research Scientist, Institute for Physics of Microstructures of RAS (Nizhny Novgorod). E-mail: mnovik@ipm.sci-nnov.ru A.A. Potapov - Dr. Sc. (Phys.-Math.), Professor, Main Research Scientist, Kotel\'nikov IRE of RAS (Moscow); President of cooperative Chinese-Russian laboratory of informational technologies and signals fractal processing (China, Guanzhou). E-mail: potapov@cplire.ru A.E. Rassadin - co-ordinator of united scientific and educational programmes of Nizhny Novgorod regional division of A.S. Popov-s STSREC (Nizhny Novgorod). E-mail: brat_ras@list.ru

Features of phase interfaces in nanosized polymer layers of planar Si-PTFE-PE+AlCl3 heterostructure

A.A. Rogachev - Ph.D. (Eng), Senior Research Scientist, Belarusian State University of Transport, Homel A.I. Egorov - Ph. D.(Eng), Senior Research Scientist, Francysk Skaryna Homiel State University Р.А. Luchnikov - Senior Research Scientist, Moscow State University of Information Technologies, Radioengineering and Electronics Liu Zhubo - Senior Research Scientist, Francysk Skaryna Homiel State University

Aspects of InAlN/InGaN heterostructures epitaxial growth for HEMT transistors of communication systems

A.A. Arendarenko - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: arendarenko.pulsar@mail.ru V.N. Danilin - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: danilin.pulsar@mail.ru А.А. Makarov - Leading Expert, JSC «GZ «Pulsar» (Moscow). E-mail: a.makarov@gz-pulsar.ru R.I. Tichkin - Head of Department, JSC «GZ «Pulsar» (Moscow). E-mail: kb-it@mail.ru

Method and equipment for measuring of low-frequency noise

V.N. Vyuginov - Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov - Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: profgudkov@gmail.com V.A. Dobrov - Head of Department, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: dobrov@svetlana-ep.ru T.Yu. Kudryashova - Senior Lecturer, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru A.V. Mescheryakov - Ph. D. (Eng.), Associate Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru V.G. Usychenko - Dr. Sc. (Phys.-Math.), Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: usychenko@rphf.spbstu.ru V.D. Shashurin - Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Bauman Moscow State Technical University. E-mail: chigikov95@mail.ru

The results of the Russian-Belarusian scientific and technical cooperation on creation of new types of nanoheterostructures

V.V. Popov - Ph.D. (Eng. S.), President, «Svetlana» JSC (Moscow) V.M. Ustinov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Ioffe Institute (Moscow) V. P. Chalyi - Ph.D. (Phys.-Math.), Director, «Svetlana-Rost» CJSC D.M. Krasovitskii - Ph.D. (Chem.), Chief Designer, «Svetlana-Rost» CJSC (Moscow) I.S. Tarasov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Ioffe Institute (Moscow) V.A. Klevtsov - Ph.D. (Eng.), Deputy General Director for Scientific and Technological Development, «Svetlana» JSC S.A. Kalinin - Head of «Scientific-technical Development» Department, «Svetlana» JSC Yu.P. Yakovlev - Dr.Sc. (Phys.-Math.), Chief Research Scientist, Ioffe Institute (Moscow) N.A. Maleev - Ph.D. (Eng.), Senior Research Scientist, Ioffe Institute (Moscow) S.V. Ivanov - Dr.Sc. (Scientist), Chief Research Scientist, Ioffe Institute (Moscow) E-mail: post@mail.ioffe.ru

Application of numerical modeling for evaluation of the influence of exploitation parameters and external impacts on the CVC of heterostructure field effect transistor used in radioelectronic equipment for space application

V.G. Tihomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: root@post.etu.spb.ru V.D. Shashurin - Dr.Sc. (Eng.), Professor, Head of Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: chigikov95@mail.ru

Magnetoresistance in the heterostructure manganite/intermetallic compound

A.S. Grishin - Engineer, Kotel-nikov Institute of Radio Engineering; Student, Moscow Technological University MIREA E-mail: alex1995@hitech.cplire.ru A.A. Klimov - Ph.D. (Phys.-Math.), Senior Research Scientist, Kotel-nikov Institute of Radio Engineering;иAssociate Professor, Moscow Technological University MIREA G.A. Ovsyannikov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Kotel-nikov Institute of Radio Engineering (Moscow) A.M. Petrzhik - Ph.D. (Phys.-Math.), Research Scientist, Kotel-nikov Institute of Radio Engineering, Moscow V. L. Preobrazhensky - Dr.Sc. (Phys.-Math.), Head of Laboratory, Wave Research Center (WRC) of Prokhorov General Physics Institute (PGPI) (Moscow) N. Tiercelin - Ph.D., Senior Research Scientist, International Associated Laboratory LEMAC-LICS: IEMN, UMR CNRS, PRES Lille Nord de France, ECLille, Villeneuve d\'Ascq, France P. Pernod - Ph.D,. Professor, Head of Laboratory, International Associated Laboratory LEMAC-LICS: IEMN, UMR CNRS, PRES Lille Nord de France, ECLille, Villeneuve d\'Ascq, France

Element base of microwave MIC for microwave radiothermometry

S.V. Chizhikov – Post-graduate Student,

Department of Instrumentation Technology, Bauman Moscow State Technical University

E-mail: chigikov95@mail.ru

Yu.V. Solov’ev – Ph.D. (Eng.), Deputy Director, JSC “Svetlana-Electronpribor” (St.-Petersburg);

Senior Research Scientist, Research Institute of Radioelectronics and Laser Engineering at Bauman Moscow State Technical University

E-mail: solovev@svetlana-ep.ru

Analysis of the influence of the base transistor topology on the static characteristics in order to determine the optimal design of the transistor as part of the MIC for microwave radiothermometry

S.V. Chizhikov¹, V.G. Tikhomirov², G.A. Gudkov³

Bauman Moscow State Technical University (Moscow, Russia)
St.-Petersburg State Electrotechnical University «LETI» (St.-Petersburg, Russia)
HYPERION ltd. (Moscow, Russia)

1 chigikov95@mail.ru, 2 vv11111@yandex.ru, 3 ooo.giperion@gmail.com

Modeling of the transparency of low-dimensional channel with quantum confinement in semiconductor devices based on 2D-structures with transverse current transfer

N.A.Vetrova¹, A.A. Filyaev², V.D. Shashurin³

1, 2, 3 Bauman Moscow State Technical University (Moscow, Russia),

1 vetrova@bmstu.ru; 2 alex.filyaev.98@gmail.com; 3 schashurin@bmstu.ru

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)

A Perseptron network for prediction of the electrical characteristics of a resonant-tunnel diode

N.A. Vetrova1, K.P. Pchelintsev2, V.D. Shashurin3

1–3 Bauman Moscow State Technical University (Moscow, Russia)

Topologically oriented approach to the choice of a method for modeling the transparency of heterostructural channels in nanoelectronic devices

V.D. Shashurin1, N.A. Vetrova2, E.V. Kuimov3, K.P. Pchelintsev4, A.S. Aleksandrov5

1,3–5 Bauman Moscow State Technical University (Moscow, Russia)
2 Peoples' Friendship University of Russia (Moscow, Russia)

A mathematical model of the influence of varying zones on the carrier concentration profile of semiconductor structures

V.B. Baiburin – Honored Scientist of RF, Dr.Sc.(Phys.-Math.), Professor, Head of Department «Information security of automated systems», Yuri Gagarin State Technical University of Saratov

E-mail: baiburinvb@rambler.ru

V.A. Kuznetsov – Dr.Sc.(Phys.-Math.), Professor, Department «Information security of automated systems», Yuri

Gagarin State Technical University of Saratov

E-mail: kuznetsov.va1948@yandex.ru

S.L. Chernyshev – Dr.Sc.(Eng.), Professor, Department «Radio Electronic Systems and Devices», Bauman Moscow

State Technical University

E-mail: chernshv@bmstu.ru

S.L. Shmakov – Ph.D.(Chem.), Associate Professor, Department of Polymers, Saratov State University named after

N.G. Chernyshevsky

E-mail: ShmakovSL@info.sgu.ru

New vertical heterostructures based on monolayers of 2D semiconductor materials: atomic and electronic structures

O.E. Glukhova − Dr.Sc. (Phys.-Math.), Professor,

Head of Department of Radiotechnique and Electro-dynamics,

Saratov National Research State University named after N. G. Chernyshevsky

E-mail: glukhovaoe@info.sgu.ru

M.M. Slepchenkov − Ph.D. (Phys.-Math.), Associate Professor,

Department of Radiotechnique and Electrodynamics,

Saratov National Research State University named after N. G. Chernyshevsky

E-mail: slepchenkovm@mail.ru

D.A. Kolosov − Post-graduate Student, Junior Research Scientist,

Department of Radiotechnique and Electrodynamics,

Saratov National Research State University named after N. G. Chernyshevsky E-mail: demkol.93@mail.ru

Research of the influence of manufacturing errors on the parameters of transistors for monolithic microwave integrated circuits and identification of key factors determining their stability as part of a miniature radiothermograph

V.G. Tikhomirov1, S.V. Chizhikov2

1 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

2 Bauman Moscow State Technical University (Moscow, Russia)

2 LLC Scientific and Production Innovative Company “Hyperion” (Moscow, Russia)

Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits

A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

Simulation of nanoelectronic device structures based on 2D materials

I.I. Abramov1, N.V. Kalameitsava2, V.A. Labunov3, I.A. Romanova4, I.Yu. Shcherbakova5

1–5 Belarusian State University of Informatics and Radioelectronics (Minsk, Belarus)

Methodological aspects of instrumentation technology: machine learning methods and artificial intelligence for the development and production of heterostructure microwave devices

A.G. Gudkov1, N.A. Vetrova2, S.V. Chizhikov3

1,2 Bauman Moscow State Technical University (National Research University) (Moscow, Russia)
2 RUDN University (Moscow, Russia)
1,3 Ltd. Hyperion (Moscow, Russia)

Intelligent analysis of data arrays in the process of diagnostics of sensorineural hearing loss

R.V. Agandeev1, I.A. Pavleev2, V.Sh. Yabbarova3, V.Yu. Leushin4

1,3 National Innovation Company LLC (Moscow, Russia)
2,4 Krinos LLC (Moscow, Russia)
2 Lomonosov Moscow State University (Moscow, Russia)
4 Bauman Moscow State Technical University (National Research University) (Moscow, Russia)

Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits

A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

1 profgudkov@gmail.com; 2 vv11111@yandex.ru; 3 chigikov95@mail.ru