O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, Place of employment: JSC «Optron». E-mail: abd@optron.ru
A.S. Yakunin - Director of Department for RF Electronics Production, Сhamber of Commerce and Industry of the Russian Federation

Wide bandgap and capability of introducing the doping centres of high concentration in the cubic boron nitride (cBN) makes this unique material promising for optoelectronics and microelectronics applications, including: - high-reliability energy-saving diodes and indicators for using in IR, visible and UV spectral regions; video modules for solid state screens of personal and shared use and cold cathodes; - X-ray emission and nuclear radiation detectors (indication systems detecting signals of danger and external impact); - IR and UV radiation visualization systems. It is expected that high thermal conductivity and stability will make cBN practically irreplaceable for applications in passive elements of prospective electronic devices, providing their ultrahigh performance. Crystalline lattice rigidity of cBN enables fabrication of devices with mechanical reliability, radiation stability and performance capability in high electric fields. High sound speed allows the use of cBN in devices operating in GHz-band and presence of piezoelectric properties gives the opportunity to use c-BN in piezoelectric elements for special purposes. Wide bandgap and the opportunity of doping with high concentration impurities make this unique material perspective for opto- and microelectronic applications.