V.V. Popov - Ph.D. (Eng. S.), President, «Svetlana» JSC (Moscow) V.M. Ustinov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Ioffe Institute (Moscow) V. P. Chalyi - Ph.D. (Phys.-Math.), Director, «Svetlana-Rost» CJSC D.M. Krasovitskii - Ph.D. (Chem.), Chief Designer, «Svetlana-Rost» CJSC (Moscow) I.S. Tarasov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Ioffe Institute (Moscow) V.A. Klevtsov - Ph.D. (Eng.), Deputy General Director for Scientific and Technological Development, «Svetlana» JSC S.A. Kalinin - Head of «Scientific-technical Development» Department, «Svetlana» JSC Yu.P. Yakovlev - Dr.Sc. (Phys.-Math.), Chief Research Scientist, Ioffe Institute (Moscow) N.A. Maleev - Ph.D. (Eng.), Senior Research Scientist, Ioffe Institute (Moscow) S.V. Ivanov - Dr.Sc. (Scientist), Chief Research Scientist, Ioffe Institute (Moscow) E-mail: post@mail.ioffe.ru

Currently, development of semiconductor heterostructures of a new type and improvement of production technology previously devel-oped heterostructures is the urgent task in the field of microelectronics. It is necessary for the realization of innovative projects on crea-tion of telecommunication systems, communication and radar equipment, photonics products, laser technology and other electronic equipment with radically improved parameters. The article reflects the results of development and application of nanoheterostructures in the framework of the Russian-Belarusian scien-tific-technical program (STP) «Perspective semiconductor heterostructures and devices based on them» («PRAMEN»). 15 types of heterostructures were developed based on two epitaxy technologies: MBE and MOCVD, including based on compounds of In-AlAs/InGaAs/InP, InGaAs/AlGaAs, GaN/AlGaN, CdSe/ZnSe, GaInAsSb/GaSb, InAsSb/InAs. The values of the basic electrophysical parameters are given for all types of structures. Developed nanoheterostructure have been tested at the leading enterprises of the Russian Federation and the Republic of Belarus by the samples microwave MIS low noise amplifiers, sources of laser radiation ranging systems, devices-speed indicators and medical devices (therapy and cosmetology), QWIP-matrices of photodetector modules of thermal imagers, optical sensors and analyzers of gases and liquids, systems of laser-diode spectroscopy, integrated semiconductor laser converter of green spectral range and other products. The STP «PRAMEN» results allowed greatly enhance the level of technological independence of development and industrial production of Russian heterostructures and devices based on them, as well as the level of integration and cooperation between enterprises of the Rus-sian Federation and the Republic of Belarus in the field of microelectronics and electronics.

 

1. Alfjorov ZH.I. Nobelevskaja lekcija, prochitannaja 8.12.2000 v Stokgolme: perevod s angl. // UFN. 2002. T. 172. № 9.  S. 1072-1086.
2. Ustinov V.M., A.JU. Egorov, ZHukov A.E. i dr. Modulirovanno-legirovannye geterostruktury dlja maloshumjashhikh SVCH-tranzistorov, sozdannye metodom molekuljarno-puchkovojj ehpitaksii // Mikroehlektronika. 1994. T. 23. Vyp. 4. S. 13-18.
3. Zemljakov V.E., Krasnik V.A., Vasilev V.I. i dr. Geterostrukturnye polevye tranzistory millimetrovogo diapazona dlin voln FGUP NPP «Istok» // 15 Int. Conf. «Microwave and Telecommunication Technology» (CriMiCo`2005). Sevastopol. 12-16 Sept. 2005.
4. Gusenkova A.V., Maleev N.A., Mikhrin V.S. i dr. Tekhnologija selektivnogo khimicheskogo travlenija dlja izgotovlenija AlGaAs/InGaAs p HEMT tranzistorov // 12th Intern. Conf. «Microwave and Telecommunication Technology» (CriMiCo`2005). Sevastopol. 12-16 Sept. 2005.
5. Bobyl A.V., Gutkin A.A., Brunkov P.N. i dr. Rentgenodifrakcionnye i ehlektronno-mikroskopicheskie issledovanija vlijanija gamma-izluchenija na mnogoslojjnye geterostruktury AlGaAs/InGaAs/GaAs // FTP. 2006. № 40. S. 707-710.
6. Maleev N.A., Ustinov V.M., Zemljakov V.E. Poluprovodnikovye nanogeterostruktury dlja SVCH-tranzistorov i monolitnykh integralnykh skhem // Tezisy dokl. konf. «Nanotekhnologii - proizvodstvu-2007». Frjazino. 28-30 nojabrja 2007. 98 s.
7. Barsegjan A., Kojama D., Uoker Dzh., Tangem V. Osobennosti primenenija moshhnykh GAN SVCH-tranzistorov v avionike i radarnykh sistemakh // SVCH EHlektronika. Prilozhenie k zhurnalu «EHlektronnye komponenty» / Pod red. A. Majjstrenko. 2016. № 1. S. 16-20.
8. Balakriev A., Turkin A. SVCH-Komponenty Wolfspeed na osnove GAN/SIC // SVCH EHlektronika. Prilozhenie k zhurnalu «EHlektronnye komponenty» / Pod red. A. Majjstrenko. 2016. № 1. S. 22-25.
9. Tarasov S., Dikarev V., Cocorin A. Moshhnye GAN SVCH-tranzistory dlja primenenija v perspektivnykh sistemakh svjazi i radiolokacii // SVCH EHlektronika. Prilozhenie k zhurnalu «EHlektronnye komponenty» / Pod red. A. Majjstrenko. 2016. № 1. S. 26-29.
10. Podgorbunskijj A., Mishurov S. Opyt primenenija GAN-tranzistorov L-diapazona ot Microsemi // SVCH EHlektronika. Prilozhenie k zhurnalu «EHlektronnye komponenty» / Pod red. A. Majjstrenko. 2016. № 1. S. 30-34.
11. Koul T. Ispolzovanie GAN-tekhnologii dlja kommercheskikh rynkov // SVCH EHlektronika. Prilozhenie k zhurnalu «EHlektronnye komponenty»: per. V. Rentjuka / Pod red. A. Majjstrenko. 2016. № 1. S. 64-65.